Method for preparing aluminium nitride copper-coated ceramic substrate
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A technology of aluminum nitride copper cladding, aluminum nitride ceramics, applied in semiconductor/solid state device manufacturing, electrical components, circuits, etc. problem, to achieve the effect of solving surface bubbles
Active Publication Date: 2014-04-30
上海富乐华半导体科技有限公司
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However, due to the poor wettability of the interface between AlN and metal Cu, the bonding strength is low, and the thermal expansion coefficients of AlN and Cu are greatly different, the resulting huge thermal stress makes the direct bonding of AlN-Cu difficult to achieve.
When the existing DBC
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Embodiment 1
[0028] (1) Raw material cleaning
[0029] The copper sheet 4 and the aluminum nitride ceramic 1 are cleaned to remove impurities on the surface of the material by using an acid-base solution and deionized water through processes such as ultrasonic cleaning, spraying, and pre-dehydration.
[0030] (2) Porcelain pre-oxidation
[0031] The oxidation temperature is set at 1000°C to 1300°C, the oxidation time is 0.5h to 24h, the atmosphere is an oxidation atmosphere under the protection of nitrogen, the nitrogen and oxygen content ratio is 4:1 to 10:1, and the thickness of the aluminum oxide layer 2 is 1 μm to 100 μm .
[0032] (3) Surface modification treatment
[0033] On the surface of the pre-oxidized aluminum nitride ceramic 1, the metal modification layer 3 is evenly coated by screen printing, and the metal modification layer 3 is copper-containing oxide including CuO or Cu 2 O or a mixture of the two, the thickness of the coating is 1 μm to 50 μm, and the sintering is car...
Embodiment 2
[0040] (1) Raw material cleaning
[0041] The copper sheet 4 and the aluminum nitride ceramic 1 are cleaned to remove impurities on the surface of the material by using an acid-base solution and deionized water through processes such as ultrasonic cleaning, spraying, and pre-dehydration.
[0042] (2) Porcelain pre-oxidation
[0043] The oxidation temperature is set at 1000°C to 1300°C, the oxidation time is 0.5h to 24h, the atmosphere is an oxidation atmosphere under the protection of nitrogen, the nitrogen and oxygen content ratio is 4:1 to 10:1, and the thickness of the aluminum oxide layer 2 is 1 μm to 100 μm .
[0044] (3) Surface modification treatment
[0045] On the surface of the pre-oxidized aluminum nitride ceramic 1, the metal modification layer 3 is evenly coated by screen printing, and the metal modification layer 3 is copper-containing oxide including CuAlO 2 or CuAl 2 o 4 Or a mixture of the two, the thickness of the coating is 1 μm to 50 μm, and the sinter...
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Abstract
The invention provides a method for preparing an aluminium nitride copper-coated ceramic substrate. The method includes the first step of washing a piece of aluminium nitride ceramic and copper pieces, the second step of conducting pre-oxidation-treatment on the aluminium nitride ceramic so that aluminium oxide layers can be generated on the surfaces of the ceramic, the third step of adding metal modification layers to the surfaces of the aluminium nitride ceramic where pre-oxidation is conducted, and conducting sintering, the fourth step of conducting thermal oxidation processing on the surfaces of the copper pieces so that cuprous oxide can be generated on the surfaces of the copper pieces, and the fifth step of placing the copper pieces on the surfaces of the modified aluminium nitride ceramic, conducting first face sintering and then conducting second face sintering, wherein each metal modification layer comprises metallic copper or copper-contained oxide or copper-contained compound or a mixture of the metallic copper, the copper-contained oxide and the copper-contained compound. According to the method for preparing the aluminium nitride copper-coated ceramic substrate, each copper-contained oxide metal modification layer is added between the aluminium nitride ceramic and the corresponding copper piece, and therefore the aluminium nitride ceramic can be tightly combined with the copper pieces, and the problem of bubbles on the AlN-DBC surfaces can be effectively solved.
Description
technical field [0001] The invention belongs to the fields of semiconductor manufacturing, LED and optical communication, and relates to a semiconductor refrigerator, a power semiconductor module, especially a large-scale, ultra-large-scale integrated circuit and a high-power LED, and especially a method for preparing an aluminum nitride copper-clad ceramic substrate. Background technique [0002] Alumina (Al 2 o 3 ) Ceramics have long been used as packaging substrate materials for power electronic devices due to their advantages such as high mechanical strength, good thermal stability, and low price. However, Al 2 o 3 The thermal conductivity of ceramics is low, only 15W / m·K~20W / m·K. As the power density of integrated circuits continues to increase, heat dissipation has become a key problem that must be solved in the design and manufacture of power electronic devices, while traditional Alumina (Al 2 o 3 ) Ceramics do not meet the requirements. [0003] Aluminum nitri...
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