Method for preparing silicon nitride/silicon oxide composite crucible

A composite crucible and silicon oxide technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of high cost of crucibles and low production success rate, and achieve the effects of improving quality, improving quality and reducing costs.

Active Publication Date: 2015-07-15
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Appolon solar has designed a new type of crucible structure, which makes the thermal conductivity of the bottom and side parts very different. The bottom part is made of transparent crystalline quartz glass, while the side part is made of non-transparent fused silica. Slurry or gel injection molding, although this scheme achieves the design effect, the cost of this crucible is high and the production success rate is low

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  • Method for preparing silicon nitride/silicon oxide composite crucible

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specific Embodiment approach 1

[0019] Specific embodiment one: the preparation method of a silicon nitride / silicon oxide composite crucible in this embodiment is carried out according to the following steps:

[0020] 1. Preparation of bottom slurry: uniformly mix silicon nitride powder and quartz powder to obtain ceramic powder, and wet-mix ball mill the ceramic powder in a polyurethane ball mill tank for 12h to 16h to obtain uniform mixed ceramic powder. The mixed ceramic powder is uniformly stirred and mixed with water, crosslinking agent I and initiator I to obtain slurry I, and then the pH value of slurry I is adjusted to 3 to 4 with lactic acid or ammonia water to obtain slurry II; The mass ratio of the silicon nitride powder to the quartz powder is 1: (2.3-99); the mass ratio of the mixed ceramic powder to water in the step 1 is 1: (0.3-0.6), and the mass ratio in the step 1 The mass ratio of the crosslinking agent I to the mixed ceramic powder is 1: (60-70), and the mass ratio of the initiator I to t...

specific Embodiment approach 2

[0027] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the crosslinking agent I in Step 1 is acrylamide. Others are the same as the first embodiment.

specific Embodiment approach 3

[0028] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the initiator I in step 1 is ammonium persulfate. Others are the same as those in the first or second embodiment.

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Abstract

The invention discloses a method for preparing a silicon nitride / silicon oxide composite crucible, relates to a method for preparing a composite crucible, and aims at solving the technical problems that the existing crucible of which the heat conductivity at the bottom is higher than that of the lateral wall is high in production cost and low in production success rate. The method for preparing the silicon nitride / silicon oxide composite crucible disclosed by the invention comprises the following steps: pulping, casting, degerming and sintering at a high temperature. By adopting the silicon nitride / silicon oxide composite crucible disclosed by the invention, the heating efficiency and the cooling efficiency can be improved, and the directional solidification effect of silicon melt is greatly improved. Thus, the growth quality of the silicon crystal is improved, and the cost of photovoltaic power generation of the crystal can be reduced. The method is mainly applied to directional solidification growth of polycrystalline silicon.

Description

technical field [0001] The invention relates to a preparation method of a composite crucible. Background technique [0002] During the crystal growth process, the crucible loaded with the crystal not only plays the role of bearing, but also needs to effectively export the heat generated by the crystallization. Therefore, the thermal and mechanical properties of the crucible play an important role in the crystal growth. Among various crystal growth methods, the solid-liquid interface of the crystal in the Kyropoulos method and the pulling method advances from the top to the bottom; while in the heat exchange method and the crucible descent method, the solid-liquid interface advances from the bottom to the top. Most of the heat is conducted from the bottom of the crucible, so the nature of the crucible is particularly important. Various traditional crystals, such as silicon ingots, sapphire, and calcium fluoride, can be grown in large sizes by heat exchange. Low-cost product...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C04B35/14C04B35/622C30B28/06
Inventor 赵丽丽吕铁铮宋爱利赵丹洋
Owner HARBIN INST OF TECH
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