A kind of preparation method of cacu3ti4o12 film doped with zirconium

Abstract

The invention discloses a method for preparing a zirconium-doped CaCu3Ti4O12 thin film, which belongs to the technical field of dielectric material synthesis. The method includes the following steps: 1) preparing a calcium-copper-titanium-containing mixed solution according to the molar ratio of calcium, copper and titanium at a ratio of 1:3:4; 2) preparing a zirconium-containing mixed solution, adding Calcium-copper-titanium-zirconium-containing precursor solution was obtained; 3) The substrate was placed in a tube furnace, heated to 900°C and kept for 10 hours, and then cooled down to room temperature naturally with the furnace; and then spin-coated The precursor liquid containing calcium copper titanium zirconium is coated on the substrate, and dried to obtain the thin film sample containing calcium copper titanium zirconium; 4) The thin film sample obtained in step 3) is placed in a tube furnace and heated at 900 ° C in an oxygen atmosphere Under heat treatment for 10 hours, the zirconium-doped CaCu3Ti4O12 thin film was obtained with the furnace cooling down. The method of the invention can accurately control the doping amount of Zr4+ in the thin film, and at the same time, the dielectric loss is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of dielectric material synthesis, in particular to a zirconium-doped CaCu 3 Ti 4 o 12 The method of film preparation. Background technique [0002] The development and research of high dielectric constant materials (ε>1000) has brought rapid development to the application of large-capacity capacitors and the miniaturization and miniaturization of electronic components. So far, some high dielectric constant materials have been applied in practical devices. CaCu was discovered in 2000 3 Ti 4 o 12 (CCTO) under the action of 1kHz AC electric field, the dielectric constant can reach 12,000, and in the temperature range from 100K to 400K, the dielectric constant is basically unchanged, and the low-frequency dielectric constant of its single crystal sample can even reach 10 5 . Once the high dielectric properties of CCTO were discovered, it immediately attracted widespread attention. However, the dielect...

AI Technical Summary

Problems solved by technology

If the physical vapor deposition method is used to prepare doped films, although the proportion of doped substances can be strictly controlled, it is not easy to mass-produce because the experiment requires expensive equipment and vacuum conditions, and the cost of material preparation is too high; if the sol-gel method is used , although the cost is low and large-area preparation can be realized, but due to the uncontrollable hydrolysis and condensation reactions in the precursor solution, the stability of the prepared solution is difficult to control, especially in the preparation of multi-component compounds. Various metal alkoxides There is a difference in the speed of the hydrolysis reaction, and it is difficult to control the stoichiometric ratio of various elements in the film, so it is even more difficult to know the amount actually doped into the film. Once the experiment cannot be quantified, it has no practical application value.

Images