Oxide semiconductor light-emitting diode epitaxial wafer, device and manufacturing method thereof

Abstract

The invention provides an oxide semiconductor light-emitting diode (LED) epitaxial wafer, a device and a manufacturing method thereof. The oxide semiconductor light-emitting diode epitaxial wafer comprises a substrate, and a template layer, an n type layer, a quantum well active layer, a carrier blocking layer and a p type layer deposited in sequence on the substrate, wherein doping elements in the p type layer at least comprise Mg; the carrier blocking layer is an oxide material containing the element Al, and the element Mg is only permeated into the p type layer at a later period but is not doped in an early depositing process. The non-intentionally-doped carrier blocking layer of a proper thickness is inserted between the active region of a quantum well and the p type layer, thereby the effectively reducing the diffusion effect of a doping agent, namely Mg, in the p type layer in the active region of the quantum well, and increasing the radiation composite efficiency of the quantum well, namely, effectively increasing the internal quantum efficiency of an oxide LED.

Description

technical field [0001] The invention relates to the technical field of semiconductor light-emitting diodes (hereinafter referred to as LEDs), in particular to a nitride semiconductor light-emitting diode epitaxial wafer, a device and a preparation method thereof. Background technique [0002] III-V nitride semiconductor materials mainly include compound materials such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (In) and aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), Aluminum indium nitride (AlInN), aluminum indium gallium nitride (AlInGaN) and other alloy materials. Since the Japanese scientist Nakamura Shuji invented GaN-based blue light-emitting diodes in the 1990s, nitride materials and light-emitting devices have attracted more and more attention. The material growth and device preparation technologies of GaN-based blue-light LEDs have developed rapidly. Nitrogen The luminous efficiency of compound white LEDs has been continuously...

AI Technical Summary

Problems solved by technology

This leads to an obvious problem: the carrier concentration imbalance in the n-type layer and p-type layer in the corresponding LED structure

These Mg atoms lead to more non-radiative recombination centers in the quantum well, which reduces the radiative recombination efficiency in the quantum well, that is, reduces the luminous efficiency

In nitride LEDs, since the hole mobility is lower than the electron mobility, one or several quantum wells close to the p-type layer are the most important light-emitting layers, that is, one or several quantum wells close to the p-type layer are important for LEDs. The luminous efficiency of the LED is very important, and due to the proximity of the p-type carrier blocking layer, the Mg in the blocking layer is easy to diffuse into these wells, so the problem of Mg diffusion is very important for the quantum efficiency of the LED, and it is quite important. negative effect

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