Magnetic nano-particle film with exchange bias effect and preparation method thereof
A technology of magnetic nanoparticles and bias effect, applied in the direction of coating with magnetic layer, application of magnetic film to substrate, magnetic layer, etc., can solve the problem that the generation conditions are difficult to be completely controllable, etc., and achieve uniform particle size and controllability of FM The effect of strong control and simple process
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Embodiment 1
[0041] A kind of magnetic nano particle film with exchange bias effect, its preparation method comprises the following steps:
[0042] Step 1): target selection
[0043] Select high-purity NiMn (99.5%) alloy target and Ta (99.95%) metal target, and put the target into the magnetron sputtering chamber;
[0044] Step 2): Preparation of AFM matrix
[0045] like figure 1 As shown, put the cleaned monocrystalline silicon (100) substrate 1 into the sample stage of the magnetron sputtering chamber; the background vacuum in the magnetron sputtering chamber is better than 1.0×10 -4 At Pa, argon gas with a purity of 99.999% was introduced, the flow rate of the argon pressure was 20sccm, and the working pressure was maintained at 3.0Pa; the DC sputtering method was adopted, the sputtering current was adjusted to 0.2A, the power was 60W, and the sputtering time was 38 seconds. Deposit a 5nm thick Ta buffer layer 2 on the substrate; then use radio frequency sputtering, the radio frequen...
Embodiment 2
[0052] A kind of magnetic nano particle film with exchange bias effect, its preparation method comprises the following steps:
[0053] Step 1): target selection
[0054] Select high-purity NiMn (99.5%) alloy target and Ta (99.95%) metal target, and put the target into the magnetron sputtering chamber;
[0055] Step 2): Preparation of AFM matrix
[0056] like figure 1 As shown, put the cleaned monocrystalline silicon (100) substrate 1 into the sample stage of the magnetron sputtering chamber; the background vacuum in the magnetron sputtering chamber is better than 1.0×10 -4 At Pa, argon gas with a purity of 99.999% was introduced, the flow rate of the argon pressure was 20sccm, and the working pressure was maintained at 3.0Pa; the DC sputtering method was adopted, the sputtering current was adjusted to 0.2A, the power was 60W, and the sputtering time was 38 seconds. Deposit a 5nm thick Ta buffer layer 2 on the substrate; then use radio frequency sputtering, the radio frequen...
Embodiment 3
[0063] A kind of magnetic nano particle film with exchange bias effect, its preparation method comprises the following steps:
[0064] Step 1): target selection
[0065] Select high-purity NiMn (99.5%) alloy target and Ta (99.95%) metal target, and put the target into the magnetron sputtering chamber;
[0066] Step 2): Preparation of AFM matrix
[0067] like figure 1 As shown, put the cleaned monocrystalline silicon (100) substrate 1 into the sample stage of the magnetron sputtering chamber; the background vacuum in the magnetron sputtering chamber is better than 1.0×10 -4 At Pa, argon gas with a purity of 99.999% was introduced, the flow rate of the argon pressure was 20sccm, and the working pressure was maintained at 3.0Pa; the DC sputtering method was adopted, the sputtering current was adjusted to 0.2A, the power was 60W, and the sputtering time was 38 seconds. Deposit a 5nm thick Ta buffer layer 2 on the substrate; then use radio frequency sputtering, the radio frequen...
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