Resistive random access memory structure and preparation method thereof

A technology of resistive variable memory and resistive variable layer, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of device switching ratio reduction, complex process, low repeatability, etc., and reduce power consumption when turning on and off , good mechanical stability, low power consumption

Inactive Publication Date: 2014-05-28
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, by adjusting the composition of the transition metal oxide, the concentration of oxygen vacancies in the oxide is relatively large, which will introduce new problems such as the decrease of th

Method used

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  • Resistive random access memory structure and preparation method thereof
  • Resistive random access memory structure and preparation method thereof
  • Resistive random access memory structure and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0047] Example 1

[0048] This embodiment provides a resistive random access memory structure with ultra-low power consumption, which is prepared by the following steps (the specific preparation process is as figure 1 Shown):

[0049] 1. Preparation / transfer of graphene

[0050] Use chemical vapor deposition to prepare graphene on the surface of copper foil. The temperature is 1050℃, the gas is 4sccm of methane and 200sccm of hydrogen, and the vacuum is 200Torr. After the graphene growth is completed, PMMA is spin-coated on the graphene / copper foil The surface of the graphene is etched with ferric chloride solution to remove the copper foil, and the remaining PMMA / graphene is transferred to the silicon substrate, and the PMMA is dissolved with acetone, leaving a composite of graphene and substrate. The thickness of graphene is 0.34nm;

[0051] After being transferred to the target substrate, metal electrodes (contact electrodes) are prepared on both ends of the graphene as the bottom...

Example Embodiment

[0059] Example 2

[0060] This embodiment provides an ultra-low-power, flexible and transparent resistive random access memory, which is prepared by the following steps (the specific preparation process is as follows: image 3 Shown):

[0061] 1. Preparation / transfer of graphene

[0062] Use chemical vapor deposition to prepare graphene on the surface of copper foil. The temperature is 1050℃, the gas is 4sccm of methane and 200sccm of hydrogen, and the vacuum is 200Torr. After the graphene growth is completed, PMMA is spin-coated on the graphene / copper foil Use ferric chloride solution to etch and remove the copper foil on the graphene surface, transfer the remaining PMMA / graphene to the PEN flexible substrate, dissolve the PMMA with acetone, and leave a composite of graphene and substrate;

[0063] After being transferred to the target substrate, a metal mask with a width of 200 μm is placed on the graphene, and a graphene strip with a width of 200 μm is prepared by plasma etching;

...

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Abstract

The invention provides a resistive random access memory structure and a preparation method thereof. A bottom electrode and/or a top electrode of the resistive random access memory structure are/is graphene. The invention also provides a preparation method of the resistive random access memory structure. The preparation method comprises the step of preparing the bottom electrode and/or the top electrode of the resistive random access memory structure from graphene. The bottom electrode and/or the top electrode of the resistive random access memory structure provided by the invention are/is made of large-area graphene instead of traditional metal, and therefore, compared with a traditional metal/oxide/metal device, a graphene-contained resistive random access memory device with the resistive random access memory structure has the advantages that the starting and stopping power consumptions can be respectively greatly reduced, and the performances on the aspects of switch ratio, cycle frequency and the like are kept equivalent. A transparent and bendable flexible resistive random access memory structure with ultra-low power consumption can be obtained through preparing the device structure on a transparent flexible polyethylene naphthalate substrate.

Description

technical field [0001] The invention relates to a resistive variable memory structure and a preparation method thereof, and belongs to the technical field of electronic component preparation. Background technique [0002] As a storage medium for data, memory is the memory core of modern computer systems. According to whether the stored information can still be saved after power failure, the memory can be divided into volatile type and non-volatile type. With the development direction of high density, low cost, low power consumption, fast read and write, high cycle times and high durability, non-volatile memory (NVM) occupies an increasingly important position in the market. Among them, silicon-based flash memory device has become the mainstream product of non-volatile memory due to its advantages of high density and low cost. However, the existing silicon-based flash memory technology has disadvantages such as low durability, low read and write speed, high operating voltag...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C13/00
Inventor 王欣然钱敏
Owner NANJING UNIV
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