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Grapheme silicon-based solar cell and manufacture method thereof

A technology of solar cells and graphene, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problem of low photoelectric conversion efficiency of solar cells, achieve the effect of improving battery conversion efficiency, improving efficiency, and solving the problem of reducing

Active Publication Date: 2014-06-04
HUAWEI TEHCHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of graphene silicon-based solar cell structure, to solve the problem that the photoelectric conversion efficiency of graphene silicon-based solar cell is not high

Method used

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  • Grapheme silicon-based solar cell and manufacture method thereof
  • Grapheme silicon-based solar cell and manufacture method thereof
  • Grapheme silicon-based solar cell and manufacture method thereof

Examples

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Embodiment 1

[0026] See figure 1 and figure 2 , to prepare silicon dioxide SiO on the front surface of n-type single crystal silicon wafer 2 layer, silicon dioxide SiO 2 There are through holes in the layer; the grid electrode structure is as follows figure 1 As shown, there are multiple main grid electrodes in the vertical direction, and auxiliary grid electrodes are arranged in the horizontal direction. The main grid electrodes and the auxiliary grid electrodes are arranged in a grid pattern. Apply photosensitive glue on the screen, and write the electrode structure on the screen through photolithography; use a screen printing machine to print Ag paste on the n-type monocrystalline silicon exposed by the through hole of the silicon dioxide layer according to the image on the screen On the chip, the Ag electrode is sintered at high temperature; the graphene solution is spread on the surface of the silicon dioxide layer and the n-type single crystal silicon chip exposed by the through ...

Embodiment 2

[0028] Please refer to Example 1 and see image 3 , to prepare silicon dioxide SiO on the front surface of n-type single crystal silicon wafer 2 layer, silicon dioxide SiO 2 There are through holes in the layer; the graphene solution is spread on the surface of the silicon dioxide layer and the n-type single crystal silicon wafer exposed by the through holes of the silicon dioxide layer by spraying process, and the graphene film and the n-type single crystal silicon Sheet bonding; grid electrode structure such as image 3 As shown, it is an S-shaped arrangement of a single grid line electrode. The structure of the grid line electrode is drawn on the screen, and photosensitive glue is coated on the screen, and the electrode structure is drawn on the screen through a photolithography process; use a screen printing machine Print the Ag paste on the graphene film in the through-hole part of the silicon dioxide layer according to the image on the screen plate, and sinter at high ...

Embodiment 3

[0037] Please refer to Example 1 and see Figure 5 , to prepare silicon dioxide SiO on the front surface of n-type single crystal silicon wafer 2 layer, silicon dioxide SiO 2 There are through holes in the layer; the grid electrode structure is as follows Figure 5 As shown, in silica SiO 2In the through hole area, the main grid electrode divides the surface of the n-type single crystal silicon wafer into several sub grid electrode areas. The sub grid electrode is arranged in the sub grid electrode area and connected to the main grid electrode. The included angle α with the main grid line electrode is 30°~80°, and the sub-grid line electrodes in the adjacent sub-grid line electrode areas are arranged symmetrically with respect to the main grid line electrodes that divide the adjacent sub-grid line electrode areas; The wire electrode structure is drawn on the screen, and the photosensitive glue is coated on the screen, and the electrode structure is drawn on the screen throu...

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Abstract

The invention discloses a grapheme silicon-based solar cell which comprises a back electrode, wherein a monocrystalline silicon slice is arranged on the back electrode, a silicon dioxide layer is arranged on the monocrystalline silicon slice and is of an annular structure with a through hole, grapheme films are arranged on the surface of the silicon dioxide layer and the surface of the monocrystalline silicon slice exposed from the through hole of the silicon dioxide layer, and a grid line electrode is arranged on the surface of the monocrystalline silicon slice exposed from the through hole of the silicon dioxide layer. The invention further discloses a manufacture method of the grapheme silicon-based solar cell. The grapheme silicon-based heterojunction cell regulates the size of a potential barrier of a grapheme silicon-based schottky junction through the grid line electrode, composite effect of electric charges on the silicon face is reduced, separation and transmission efficiency of charge carriers is increased, photoelectric conversion efficiency of the cell is increased, and the problem that the photoelectric conversion efficiency of the existing grapheme silicon-based solar cell is decreased along with increase of the device size is solved.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a graphene silicon-based solar cell and a manufacturing method thereof. Background technique [0002] A solar cell is a device that uses the photovoltaic effect of semiconductor materials to convert light energy into electrical energy. According to the structure, it can be divided into homojunction solar cells composed of one or more PN junctions composed of homogeneous materials; heterojunction solar cells composed of one or more PN junctions composed of heterogeneous materials; composed of metal and semiconductor contacts Schottky junction solar cell; a photoelectrochemical solar cell consisting of semiconducting electrodes in an electrolyte. In recent years, the most mature silicon-based semiconductor PN junction solar cells are facing several major problems such as high energy consumption, high cost, and high pollution, and bottlenecks have emerged in relate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18H01L31/04
CPCY02E10/50H01L31/022425H01L31/022433H01L31/07Y02P70/50
Inventor 况亚伟刘玉申马玉龙薛春荣徐竞
Owner HUAWEI TEHCHNOLOGIES CO LTD
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