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A method for Gan single crystal growth using patterned annealed porous structures

A porous structure and patterned technology, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of complex process and achieve the effect of mature process, improved quality and simple production

Active Publication Date: 2016-05-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the process of these methods is complicated, and an independent and simple new method is urgently needed to prepare porous substrates to improve the quality of HVPE grown GaN

Method used

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  • A method for Gan single crystal growth using patterned annealed porous structures
  • A method for Gan single crystal growth using patterned annealed porous structures
  • A method for Gan single crystal growth using patterned annealed porous structures

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Experimental program
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Embodiment 1

[0019] figure 1 The process of GaN single crystal growth using the patterned annealed porous structure of the present invention is given, and the growth process includes: SiO 2 Three stages of pattern mask preparation, high temperature annealing and cleaning, and HVPE growth of GaN single crystal. Specific steps are as follows:

[0020] (1) On the GaN epitaxial wafer prepared by MOCVD (metal organic compound chemical vapor deposition) method, SiO was prepared by photolithography and wet etching. 2 Pattern mask, SiO 2 The pattern is a square arrangement of openings, the thickness of the GaN epitaxial wafer is 2 μm, and the SiO 2 The mask thickness is 50nm, the aperture period is 60μm, and the aperture diameter is 10μm;

[0021] (2) will have SiO 2 The GaN epitaxial wafer with the pattern mask is annealed at 1200°C for 90 minutes in a vacuum furnace;

[0022] (3) The annealed SiO 2 The GaN epitaxial wafer with the pattern mask is ultrasonicated in deionized water for 5 mi...

Embodiment 2

[0027] The difference between this embodiment and embodiment 1 is:

[0028] The thickness of the GaN epitaxial wafer in step (1) is 3 μm, SiO 2 The graphic mask pattern is a hexagonal arrangement of openings, SiO 2 The mask thickness is 100nm, the aperture period is 150μm, and the aperture diameter is 12μm;

[0029] The high-temperature annealing temperature in step (2) is 1300°C, and the annealing time is 70 minutes;

[0030] In step (3), the rinsing time of concentrated phosphoric acid is 1 min; the rinsing time is 1 min in 53°C acetone and 73°C ethanol solutions respectively; the rinsing time of hydrofluoric acid is 20 seconds.

Embodiment 3

[0032] The difference between this embodiment and embodiment 1 is:

[0033] The thickness of GaN epitaxial wafer in step (1) is 5 μm, SiO 2 The thickness of the graphic mask is 60nm, the opening period is 120μm, and the opening diameter is 15μm;

[0034] The high-temperature annealing temperature in step (2) is 1250°C, and the annealing time is 80 minutes;

[0035]In step (3), the rinsing time of concentrated phosphoric acid is 4 minutes; the rinsing time is 5 minutes respectively in 25°C acetone and 25°C ethanol solutions; the rinsing time of hydrofluoric acid is 5 minutes.

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Abstract

The invention relates to a method for carrying out GaN single crystal growth by using a graphic annealing porous structure. The method comprises the following steps of (1) preparing an SiO2 graphic mask on a GaN epitaxial wafer; (2) annealing the GaN epitaxial wafer with the SiO2 graphic mask in a 4) vacuum furnace at high temperature; (3) forming the annealed GaN epitaxial wafer with the SiO2 graphic mask into a porous GaN substrate; (4) carrying out HVPE (Hydride Vapor Phase Epitaxy) epitaxial growth on the porous GaN substrate to obtain the GaN single crystal. The method disclosed by the invention finally obtains the high-quality GaN single crystal through the preparation of the SiO2 graphic mask of the GaN epitaxial wafer, high-temperature annealing, cleaning, drying and the HVPE epitaxial growth, is favorable for the epitaxially grown GaN single crystal to form a self-supporting substrate through self stripping, is simple in preparation and mature in process, can enhance the quality of the epitaxially grown GaN single crystal and is favorable to realizing the self stripping of the GaN single crystal and a foreign substrate and suitable for batch production.

Description

technical field [0001] The invention relates to a method for preparing a GaN growth substrate with a patterned porous structure through an annealing process, and then using a HVPE (Hydride Vapor Phase Epitaxy) method to grow a GaN single crystal, belonging to the technical field of GaN single crystal growth. Background technique [0002] With the rapid development of the electronic information industry, modern electronic technology puts forward new requirements for the performance of semiconductor materials under high temperature, high frequency, and high voltage conditions. The third-generation semiconductor materials represented by GaN have a large High electric field, high thermal conductivity, high drift velocity of saturated electrons, small dielectric constant, strong radiation resistance, good chemical stability and other properties, it has been widely used in light-emitting diodes (LEDs), laser diodes (LDs) and other fields . [0003] Due to the lack of GaN bulk sin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/04C30B29/40
Inventor 郝霄鹏戴元滨吴拥中张雷邵永亮刘晓燕田媛
Owner SHANDONG UNIV