A kind of preparation method of nanowire crystalline silicon solar cell with lateral transport characteristics
A crystalline silicon solar cell and nanowire technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effect of reducing production costs, facilitating lateral transmission, and simple preparation
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Embodiment 1
[0021] 1. Wash the P-type single crystal silicon substrate (100) with a thickness of 280 μm with a mixed solution of ammonia water, hydrogen peroxide, and deionized water at a volume ratio of 8:2:1 at 80°C for 10 minutes, and then wash it with hydrochloric acid, hydrogen peroxide, The mixed solution with a volume ratio of deionized water of 5:1:1 was washed at 80° C. for 10 minutes, then rinsed with deionized water, and dried with nitrogen.
[0022] 2. Corrode the silicon substrate cleaned in step 1 in a mixed solution of hydrofluoric acid and 0.2% silver nitrate aqueous solution with a volume ratio of 1:10 at room temperature for 30 seconds, and deposit a layer of silver film on the surface of the silicon substrate ; The volume ratio of hydrofluoric acid, hydrogen peroxide, and deionized water is then corroded at room temperature for 3 minutes in a mixed solution of 5:1:44, and then soaked in concentrated nitric acid to remove residual silver particles; finally use a mass frac...
Embodiment 2
[0028] In step 4 of this embodiment, a ZnO film with a thickness of 10 nm is deposited on the surface of the silicon substrate after phosphorus diffusion by atomic layer deposition technology as a seed layer for growing nanorods, and then the silicon substrate is inverted in ammonia water and In a mixed solution with a mass fraction of 2% zinc nitrate aqueous solution and a volume ratio of 1:30, heat at 100°C for 30 minutes to grow ZnO nanorods between the silicon nanowire gaps, and finally take them out and rinse them with deionized water and blow them with nitrogen. Dry. Other steps are the same as in Example 1. After testing, the cell conversion efficiency of the nanowire crystalline silicon solar cell prepared in this embodiment is 2.5% higher than that of the nanowire crystalline silicon solar cell not filled with ZnO nanorods.
Embodiment 3
[0030] In step 4 of this embodiment, a ZnO film with a thickness of 10 nm is deposited on the surface of the silicon substrate after phosphorus diffusion by atomic layer deposition technology as a seed layer for growing nanorods, and then the silicon substrate is inverted in ammonia water and In a mixed solution with a mass fraction of 5% zinc nitrate aqueous solution and a volume ratio of 1:30, heat at 70°C for 60 minutes to grow ZnO nanorods between the silicon nanowire gaps, and finally take them out and rinse them with deionized water and blow them with nitrogen. Dry. Other steps are the same as in Example 1. After testing, the cell conversion efficiency of the nanowire crystalline silicon solar cell prepared in this embodiment is 2.7% higher than that of the nanowire crystalline silicon solar cell not filled with ZnO nanorods.
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Abstract
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