Method for preparing boron-doped carbon quantum dots by one-step solvothermal method and application of boron-doped carbon quantum dots

A technology of carbon quantum dots and solvothermal method, applied in chemical instruments and methods, fluorescence/phosphorescence, luminescent materials, etc., can solve problems such as sensor interference, achieve high sensitivity, good biocompatibility, and simple preparation process equipment Effect

Inactive Publication Date: 2014-06-25
ZHEJIANG NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these sensors are easily interfered by other electroactive

Method used

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  • Method for preparing boron-doped carbon quantum dots by one-step solvothermal method and application of boron-doped carbon quantum dots
  • Method for preparing boron-doped carbon quantum dots by one-step solvothermal method and application of boron-doped carbon quantum dots
  • Method for preparing boron-doped carbon quantum dots by one-step solvothermal method and application of boron-doped carbon quantum dots

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Embodiment 1

[0031] Embodiment 1: The method for preparing boron-doped carbon quantum dots by one-step solvothermal method

[0032] Such as figure 1 As shown, weigh 1.0g of hydroquinone, place it in a 25mL stainless steel autoclave lined with polytetrafluoroethylene, add 5mL of acetone to dissolve, pipette 2.58mL of boron tribromide and slowly drop it into the above reaction kettle In the process, the sealed reactor was placed in a blast drying oven and heated at 200°C for 2 hours. When the autoclave is cooled to room temperature, the mixed liquid in the autoclave is concentrated and evaporated to dryness by means of rotary evaporation to obtain boron-doped carbon quantum dots. Such as figure 2 The aTEM imaging results in the paper show that the prepared boron-doped carbon quantum dots are approximately spherical, uniform in size, good in dispersion, without agglomeration, and the particle size is mainly distributed in the range of 8-22nm. Such as figure 2 The high-resolution transm...

Embodiment 2

[0036] Embodiment 2: The method for preparing boron-doped carbon quantum dots by one-step solvothermal method

[0037] Such as figure 1 As shown, weigh 1.0g of hydroquinone, place it in a 25mL stainless steel high-pressure reactor lined with polytetrafluoroethylene, add 5mL of acetone to dissolve, pipette 1.72mL of boron tribromide and slowly drop it into the above reactor In the process, the sealed reactor was placed in a blast drying oven and heated at 220° C. for 5 hours. When the autoclave is cooled to room temperature, the mixed liquid in the autoclave is concentrated and evaporated to dryness by means of rotary evaporation to obtain boron-doped carbon quantum dots.

[0038] Use the reference method to measure the fluorescence quantum yield, the calculation formula is: Ф=Ф S [(I·A s n 2 ) / (I s ·A·n s 2 )](Ф represents the quantum yield, I represents the integral area of ​​the fluorescence emission spectrum excited by the optimal excitation wavelength, A represents...

Embodiment 3

[0041] Embodiment 3: The method for preparing boron-doped carbon quantum dots by one-step solvothermal method

[0042] Such as figure 1 As shown, weigh 1.0g of hydroquinone, place it in a 25mL stainless steel autoclave lined with polytetrafluoroethylene, add 5mL of acetone to dissolve, pipette 0.86mL of boron tribromide and slowly drop it into the above reaction kettle , the sealed reactor was placed in a forced air oven and heated at 150°C for 1 hour. When the autoclave is cooled to room temperature, the mixed liquid in the autoclave is concentrated and evaporated to dryness by means of rotary evaporation to obtain boron-doped carbon quantum dots.

[0043] Use the reference method to measure the fluorescence quantum yield, the calculation formula is: Ф=Ф S [(I·A s n 2 ) / (I s ·A·n s 2 )](Ф represents the quantum yield, I represents the integral area of ​​the fluorescence emission spectrum excited by the optimal excitation wavelength, A represents the absorbance at the ...

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Abstract

The invention relates to the field of carbon quantum dot preparation and in particular relates to a method for preparing boron-doped carbon quantum dots by a one-step solvothermal method and an application of the boron-doped carbon quantum dots. The preparation method comprises the steps of putting hydroquinone into a stainless steel high pressure reactor with a polytetrafluoroethylene lining, adding acetone according to the proportion of hydroquinone to acetone being 1.0g:5mL, and then dropping boron tribromide into the reactor slowly; putting the sealed reactor into an air dry oven, heating the reactor at 150-220 DEG C for 1-5 hours, and then cooling the reactor to the room temperature; concentrating and evaporating the mixed liquid in the reactor to dryness by using the mode of rotary evaporation, thus obtaining the boron-doped carbon quantum dots. The boron-doped carbon quantum dots prepared by the method can be used for detecting the contents of hydrogen peroxide and glucose.

Description

technical field [0001] The invention relates to the field of carbon quantum dot preparation, in particular to a method for preparing boron-doped carbon quantum dots by a one-step solvothermal method and an application thereof. Background technique [0002] Due to its unique properties, carbon quantum dots are considered to be a very promising material in optoelectronic devices, sensors, biological imaging and photocatalysts. Compared with conventional organic dyes and semiconductor quantum dots, carbon quantum dots are chemically inert, have no light flicker, low toxicity, and good biocompatibility. However, the low quantum yield limits their applications in biological sciences. In order to solve this problem, many studies often use polymers or small organic molecules to passivate the surface of carbon quantum dots to improve their quantum yield. In addition, doping carbon quantum dots is also a good choice to improve their chemical properties and expand their applications...

Claims

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Application Information

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IPC IPC(8): C09K11/65G01N21/64
Inventor 钱兆生单晓月丰慧柴鲁静马娟娟
Owner ZHEJIANG NORMAL UNIVERSITY
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