Method for preparing hierarchical porous TiO2/quantum dot composite material

A composite material and quantum dot technology, which is applied in the field of preparation of hierarchical porous TiO2/quantum dot composite materials, can solve the problems of ineffective electron transfer and electron depletion.

Active Publication Date: 2014-06-25
SHIJIAZHUANG TIEDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the reported literature is to synthesize quantum dots through complicated steps, and then graft them to TiO through methods such as bifunctional groups. 2 On, quantum dots and TiO 2 The defects of electron annihilation and inability to effectively transfer electrons appear at the junction

Method used

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  • Method for preparing hierarchical porous TiO2/quantum dot composite material
  • Method for preparing hierarchical porous TiO2/quantum dot composite material
  • Method for preparing hierarchical porous TiO2/quantum dot composite material

Examples

Experimental program
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Effect test

Embodiment 1

[0023] (1) Hierarchical Porous TiO 2 Preparation of semiconductor powder: add F127 to absolute ethanol (EtOH), stir until the solution is clear, then add TiCl dropwise 4 Continue to stir, the molar ratio of raw materials is F127: EtOH: TiCl 4=1:3397:76, the stirring temperature is 40°C, then put the obtained precursor into a hydrothermal kettle and heat it at 160°C for 16 hours; heat it after filtering and drying, and keep it at 500°C for 240min. Annealed to prepare hierarchically porous TiO 2 Powder.

[0024] (2) Hierarchical Porous TiO 2 / CuInGaS 2 Preparation of Quantum Dot Composite Materials: In the Hierarchical Porous TiO 2 In the powder, add InCl respectively 3 Precursor solution and GaCl 3 Keep the precursor solution under vacuum for 20 minutes, take it out and dry it at 80°C to obtain A; follow the above operation method, and then add CuCl 2 Precursor solution and Na 2 S precursor solution is added to A, the molar ratio of raw materials is TiO 2 : CuCl 2 :I...

Embodiment 2

[0026] (1) GaCl 3 4H 2 O, InCl 3 4H 2 O and Cu 2 Cl (the ratio of the amount of substances is 1:1:1) was added to oleylamine (OA), and stirred at 120°C for 1h;

[0027] (2) Stir sulfur powder (S powder) and OA at 60°C until dissolved;

[0028] (3) After mixing the above two solutions, add them into hexane and stir evenly, and heat them in water at 110°C for 1 hour to obtain CuInGaS 2 Quantum dot solution;

[0029] (4) the hierarchical porous TiO in embodiment 1 2 with CuInGaS 2 Mix the quantum dot solution, stir it in a water bath at 80°C until it becomes viscous, then dry it in a drying oven at 80°C, and finally bake the obtained powder at 500°C for 2 hours, take it out and grind it to obtain a hierarchical porous TiO 2 / CuInGaS 2 Quantum dot composites.

Embodiment 3

[0031] Hierarchical porous TiO in embodiment 1 2 The powder was ground until viscous, coated on a glass slide, and fired at 500°C for 2 hours to obtain a layer of hierarchically porous TiO 2 thin films, which were sequentially immersed in InCl 3 Precursor solution (0.1mol / L), GaCl 3 Precursor solution (0.1mol / L), Na 2 S precursor solution (1mol / L), CuCl 2 Precursor solution (0.1mol / L), the immersion time was 60s, 60s, 120s and 60s, respectively, and the TiO 2 The film was rinsed with deionized water, circulated 10 times, dried and then roasted. The roasting method was to keep warm at 300°C and 500°C for 30min and 60min respectively, and the heating rate was 2°C / min. Finally, a multi-stage film was obtained. Porous TiO 2 / CuInGaS 2 Quantum dot composites.

[0032] The effective effects of the present invention can be further described in conjunction with the accompanying drawings. figure 1 a is the hierarchical porous TiO in Example 1 2 Transmission electron microscope...

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Abstract

The invention discloses a method for preparing a hierarchical porous TiO2/quantum dot composite material. The diameter of a hierarchical porous TiO2 particle is 5-500 nm, the material is a hierarchical porous material, the diameter of a quantum dot is 1-20 nm, and quantum dots are uniformly distributed on the surfaces of hierarchical porous TiO2 particles. According to the invention, the hierarchical porous TiO2/quantum dot composite material is prepared from a vacuum nanometer pouring method step by step, and the method includes the following steps: firstly preparing different quantum dot precursor solutions, weighing a certain amount of hierarchical porous TiO2 powder, adding the hierarchical porous TiO2 powder in the quantum dot precursor solutions in steps, pouring and adsorbing under a vacuum state, then drying and roasting to obtain the hierarchical porous TiO2/quantum dot composite material. The method reduces the synthesis cost of the material and has a simple process, in the prepared material, the quantum dots are uniformly distributed on the surfaces of TiO2 particles, and the material has a hierarchical porous structure and has great significance in the field of optoelectronic materials and photocatalytic materials etc.

Description

technical field [0001] The invention relates to a kind of hierarchical porous TiO 2 The invention discloses a method for preparing a quantum dot composite material, which belongs to the fields of semiconductor photoelectric materials and photocatalytic materials. Background technique [0002] Energy shortage and environmental pollution are two major problems faced by human beings. The research on fully utilizing the conversion energy of solar energy and photocatalytic degradation of organic matter has become a research hotspot in various countries. Hierarchical porous semiconductor oxides such as TiO 2 , SiO 2 , ZnO, SnO 2 、Bi 2 o 3 etc., exhibit excellent properties in optics, sensing, photocatalysis, photovoltaics, electrocatalysis, and magnetism, and have received extensive attention and attention due to their abundant raw materials, low cost, and simple synthesis process. A single multi-level porous semiconductor oxide has a wide band gap and a narrow absorption sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/67B01J27/04H01L51/42
CPCY02E10/549
Inventor 赵晋津汪文娜张江宾王鹏王蕾王俊朋
Owner SHIJIAZHUANG TIEDAO UNIV
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