Oxide semiconductor manufacturing method

Abstract

The invention provides an oxide semiconductor manufacturing method comprising that a substrate is provided. Metal ions from a first metal oxide target material are sputtering-coated on the substrate and at least two types of metal ions from a second metal oxide target material are sputtering-coated on the substrate so that an oxide semiconductor thin film is formed via deposition. In the sputtering-coating process, thin film deposition rate and use cycle of a sputtering-coating device blocking plate are controlled so that composition proportion of the thin film is adjusted. The at least two types of metal ions on the second metal oxide target material are different from the metal irons from the first metal oxide target material. Composition proportion of the prepared oxide semiconductor thin film can be effectively controlled by the method so that enhancement of manufacturing quality of a thin-film transistor is facilitated. The invention also provides a thin-film transistor manufacturing method.

Description

technical field [0001] The present invention relates to a method for manufacturing an oxide semiconductor. Background technique [0002] With the advancement of process technology, thin film transistors have been widely used in displays to meet the requirements of thinning and miniaturization of displays. Thin film transistors generally include components such as gate, drain, source, and channel layer, which change the conductivity of the channel layer by controlling the voltage of the gate, so that the source and drain are turned on or off. state. [0003] In the traditional thin film transistor manufacturing method, the channel layer (active layer, i.e. channel layer) is an indium gallium zinc oxide (IGZO) film deposited by a single target material, and the material of the target material is usually InGaZnO 4 、In 2 Ga 2 ZnO 7 、In 2 o 3 (ZnO) m (m=2~20), etc. However, the composition ratio of the channel layer film manufactured by this traditional manufacturing meth...

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Problems solved by technology

[0003] In the traditional thin film transistor manufacturing method, the channel layer (active layer, i.e. channel layer) is an indium gallium zinc oxide (IGZO) film deposited by a single target material, and the material of the target material is usually InGaZnO 4 、In 2 Ga 2 ZnO 7 、In 2 o 3 (ZnO) m (m=2~20), etc. However, the composition ratio of the channel layer film manufactured by this traditional manufacturing method is directly determined by the material composition of the target, and cannot be controlled or adjusted during the deposition process, thus affecting the thin film transistor. manufacturing quality

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