Graphical substrate and inverted LED chip and manufacturing method thereof

Abstract

The invention provides a graphical substrate and an inverted LED chip and a manufacturing method thereof. A concave pit is formed on the surface of a substrate, the concave pit is filled with an insulation medium film, translucent material is adopted by a substrate and the insulation medium film, the refractive index of the insulation medium film is between the refractive index of the substrate and the refractive index of an epitaxial layer, thereby forming a refractive index gradient, that is, a micro lens is embedded on the surface of the substrate, the embedded micro lens can have a focus effect and can reduce light reflection to guarantee that luminous energy can be transmitted out from the light output surface of the substrate to the maximum degree, so that the light output efficiency of the inverted LED is improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic chip manufacturing, in particular to a patterned substrate, a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode (LED) is a new type of solid-state cold light source, which has many advantages such as high energy efficiency, long life, small size, and low voltage, making it widely used in people's daily life. For example, LEDs are widely used in traffic lights, car headlights, outdoor displays, mobile phone backlights, electrical indicator lights, and some lighting street lights. Especially in terms of energy saving and environmental protection, LED lamps have obvious advantages over ordinary incandescent lamps and fluorescent lamps, so it has become a consensus that they will replace traditional light sources as the main lighting source in the future. [0003] At present, most LED epitaxial layers are prepared on het...

AI Technical Summary

Problems solved by technology

[0004] Most of the commercialized LED chips are grown on the sapphire substrate, and then fixed on the packaging bracket, which leads to the following problems: 1) It mainly dissipates heat through conduction, and the sapphire substrate is thick, so the heat is difficult to export, The accumulation of heat on the chip affects the reliability of the chip, increases the light decay and reduces the life of the chip; 2) Due to the light blocking of the electrode, the light output of the chip will be reduced, resulting in the problem of low light efficiency; 3) The current crowding will increase the voltage of the chip, these 4) The packaging is complicated, and the voltage of a single LED chip is about 3V, so it needs to be transformed or packaged to connect it in series, which increases the difficulty of packaging and application, and the process difficulty increases, making the whole chip poor reliability

However, since the refractive index of sapphire is lower than that of gallium nitride, the material of the epitaxial layer, the light emitted from the epitaxial layer will be reflected at the interface between the epitaxial layer and the sapphire substrate, resulting in more light not being emitted and affecting the light extraction efficiency.

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