Film capacitor with stable electrode structure and preparation method thereof

Abstract

The invention discloses a thin film capacitor with a stable electrode structure and a preparation method of the thin film capacitor. A titanium transition layer, a Pt / Ti alloy layer, a platinum electrode layer, a barrier layer and functional film are arranged on a substrate in sequence. The preparation method comprises the steps that the cleaned substrate is placed into a magnetron sputtering instrument vacuum chamber, and sputtering deposition of the titanium transition layer is carried out; sputtering of titanium and sputtering of platinum are carried out at the same time so that the Pt / Ti alloy layer can be obtained; the platinum electrode layer is prepared, and after electrode heat treatment is carried out, an electrode alloy structure is obtained; sputtering deposition of the titanium dioxide barrier layer is carried out on the substrate; sputtering deposition of the functional film is carried out, so that the thin film capacitor is obtained. The thin film capacitor with the stable electrode structure is stable in structure, preparation of thick metal electrodes can be achieved on the situation that the titanium transition layer is thin, voltage resistance of the thin film capacitor is improved, and convenience is provided for follow-up micromachining of graphical electrodes.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a film capacitor with a stable electrode structure and a preparation method thereof. Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices. Microwave devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are essential components of current and next-generation communication systems. Reducing the size of devices and further improving the integration of circuit systems are the themes of the development of microwave communication systems today. [0003] In the preparation process of film capacitors, the preparation of electrodes is the main problem in the process of device microfabrication. Taking parallel plate capacitors as an example, the diffusion of electrodes to the dielectric film layer, the adhesion of e...

AI Technical Summary

Problems solved by technology

However, the adhesion between the metal electrode and the substrate is poor, and a layer of transition layer metal (usually titanium) is often required to connect

However, the conductivity of the transition layer metal is poor, and thicker electrodes cannot be prepared on the transition layer metal, resulting in low withstand voltage of the film capacitor

On the other hand, during the heat treatment process of the dielectric film, the metal particles in the electrode are excited by heat and easily diffuse into the dielectric film, causing the device to be turned on or lose its proper function.

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