Preparation method of cadmium arsenide semiconductor nanocluster

Abstract

The invention relates to a preparation method of a cadmium arsenide nanocluster, particularly a synthesis method for mass preparation of a cadmium arsenide nanocluster, belonging to the technical field of preparation of semiconductor nano materials. The method comprises the following steps: reacting arsenide and inorganic acid to prepare AsH3 gas, and meanwhile, introducing the gas into a cadmium carboxylate octadecene solution under the protection of N2 to react so as to generate a Cd3As2 nanocluster compound; the nanocluster has very sharp and symmetric absorption and fluorescence peaks, and has the advantages of favorable luminescence and favorable monodispersity; the whole reaction is simple to operate; all the reactants are low in cost and easy to preserve; and the method can implement mass synthesis and does not use organic phosphorus in the reaction process.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor nano material preparation, and relates to a synthetic method that can be used for mass preparation of cadmium arsenide nano clusters. Background technique [0002] After the semiconductor material gradually decreases from the bulk phase to a certain critical size (1-20 nanometers), the volatility of its carriers becomes significant, the movement will be restricted, resulting in an increase in kinetic energy, and the corresponding electronic structure is continuous from the bulk phase. The energy level structure becomes a quasi-split discontinuity, which is called the quantum size effect. The more common semiconductor nanoparticles, namely quantum dots, mainly include II-VI, III-V and IV-VI groups. These types of quantum dots all follow the quantum size effect very much, and their properties change regularly with size, for example, the absorption and emission wavelengths change with size. Theref...

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Problems solved by technology

At present, the synthesis methods of magic-sized nanoclusters are relatively cumbersome, using a large amount of phosphorus-containing compounds, and the optical properties are not very good, and the fluorescence quantum efficiency is low.

[0005] CdAs nanoclusters are typical II-V semiconductor nanoclusters. Compared with common II-VI (such as CdSe, CdS, etc.) The method is relatively cumbersome, the synthesis process is limited by materials, the cost is expensive, and it is not conducive to large-scale synthesis. For example, the Bawendi group reported in 2011 using very active 3-(trimethylsilyl)arsenic TMS-As as an arsenic source to prepare Cd 3 As 2 Nanoclusters (J Am.Chem.Soc.2011, 133, 4676), the TMS-As used in it is very active and prone to redox reactions. It is highly toxic, flammable and explosive, so it needs strict storage with tools such as glove boxes. Therefore, the experimental operation is relatively complicated and requires certain laboratory conditions.

In summary, the current Cd 3 As 2 There are still many problems in the synthesis of nanoclusters. Most of the existing synthesis methods require harsh experimental conditions, such as complicated and cumbersome operation processes, expensive, difficult to store and highly toxic experimental raw materials, etc.

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