Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bismuth oxyhalide light-emitting material with doped rare earth ions and preparation method thereof

A bismuth oxyhalide and luminescent material technology, which is applied in luminescent materials, chemical instruments and methods, can solve the problems of low luminous efficiency and high preparation cost, and achieve the effects of low raw material cost, simple preparation method, and low synthesis temperature

Inactive Publication Date: 2015-05-20
KUNMING UNIV OF SCI & TECH
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the disadvantages of low luminous efficiency or high preparation cost of existing rare earth ion doped indirect semiconductor materials, and to provide a method to change the bandgap structure of indirect semiconductors by doping specific rare earth ions, and make the indirect semiconductor bismuth oxyhalide Converted into a rare earth-doped semiconductor luminescent material with both high-efficiency absorption and luminescence

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Weigh Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3, KBr, and then dissolved in water to prepare a solution with a concentration of 0.1mol / L; then stir evenly, then adjust the pH value to 0.5 with dilute hydrochloric acid, then transfer to a hydrothermal kettle with a polytetrafluoroethylene liner, The filling degree is 0.8, and the temperature is raised to 120°C, and the temperature is kept for 12 hours to obtain the product material;

[0021] (2) Wash the product obtained in step (1) three times with deionized water and ethanol, and then dry it to obtain the chemical formula Bi 0.999 Eu 0.001 Rare earth ion doped bismuth oxybromide luminescent material of OBr. The material can be obtained under the irradiation of ultraviolet light in the 254nm and 360nm bands, which belongs to Eu 3+ Bright red luminescence, the excitation range of the near-ultraviolet band is 300~400nm band, the excitation peak is very broad and strong, overlapping with the band gap position of the mate...

Embodiment 2

[0023] (1) According to the molar ratio of Bi ion: Eu ion: Ho ion: Br ion = 0.975: 0.02: 0.005: 1, weigh Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3 、Ho(NO 3 ) 3 , KBr, and then dissolved in ethanol to prepare a solution with a concentration of 1mol / L; then add polyvinylpyrrolidone to the solution in an amount of 10% of the total mass of bismuth nitrate, rare earth nitrate and potassium halide, and stir evenly, then Adjust the pH value to 6 with dilute ammonia water, then transfer it to a hydrothermal kettle with a polytetrafluoroethylene liner, the filling degree is 0.8, and raise the temperature to 160°C, keep it warm for 12 hours, and obtain the product material;

[0024] (2) The product obtained in step (1) was washed with deionized water and ethyl acetate, and then heat-treated at 200°C for 4 hours to obtain the chemical formula Bi 0.975 Eu 0.02 Ho 0.005 Bismuth oxyhalide luminescent material doped with rare earth ions of OBr. The material can be obtained under the irradiat...

Embodiment 3

[0026] (1) According to the molar ratio of Bi ion: Eu ion: Sm ion: Cl ion = 0.85: 0.1: 0.05: 1, it is called Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3 , Sm(NO 3 ) 3 , KCl, and then dissolved in methanol to prepare a solution with a concentration of 1.2mol / L; then stir evenly, then adjust the pH value to 2 with dilute hydrochloric acid, and continue to stir for 12 hours to obtain the product material;

[0027] (2) Wash the product obtained in step (1) with deionized water, and then heat-treat it at 500°C for 2 hours to obtain the chemical formula Bi 0.85 Eu 0.1 SM 0.05 Bismuth oxyhalide luminescent material doped with rare earth ions of OCl. The material can be obtained under the irradiation of ultraviolet light in the 254nm and 360nm bands and belongs to Eu 3+ Bright red glow and Sm 3+ The red luminescence of ions, in which the excitation range of the near-ultraviolet band is 300-400nm, the excitation peak is very broad and strong, overlaps with the band gap position of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a bismuth oxyhalide luminescent material doped with rare earth ions and a preparation method thereof. The material is composed of the chemical formula Bi1-x-yEuxReyOM, wherein x=0.001-0.5, y=0-0.5, M is Cl, Br, Any one or several of I; Re is any one or several of Tb, Ce, Nd, Dy, Sm, Pr, Lu, Er, Tm, Yb, Gd, Ho, La. Weighing bismuth nitrate, rare earth nitrate, and potassium halide to prepare a solution; then heat-treating to obtain the product material, washing and heat-treating to obtain the rare earth ion-doped bismuth oxyhalide luminescent material with the chemical formula Bi1-x-yEuxReyOM. The material of the invention can effectively achieve doping, has good luminescent properties, high absorption and excitation efficiency for ultraviolet and visible band light, and has simple preparation method, easy control, low cost of raw materials, and low synthesis temperature of high-temperature solid-phase method.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, and relates to a bismuth oxyhalide luminescent material doped with rare earth ions and a preparation method thereof. Background technique [0002] Semiconductors can be used as luminescent materials and photocatalytic materials. When the photon energy of the irradiating light is higher than the bandgap energy of the semiconductor, the irradiating light can be completely absorbed by the semiconductor. Therefore, semiconductor materials have broadband absorption characteristics for irradiation or excitation light. For semiconductor materials of the direct bandgap type, when used as light-emitting materials, they have higher stimulated emission efficiency. However, at present, such direct bandgap semiconductor materials that can be excited by ultraviolet or visible light and used for illuminating luminescent materials, such as gallium nitride, have problems such as expensive, complic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/86
Inventor 宋志国李永进李臣尹兆益邱建备杨正文周大成杨勇余雪徐旭辉韩缙
Owner KUNMING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com