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Hard mask surface treatment

A technology of surface treatment and surface treatment agent, which is applied in the direction of pretreatment surface, device for coating liquid on the surface, original parts for photomechanical treatment, etc. It can solve the problem that the pattern of the light-blocking layer cannot be effectively prevented from collapsing

Active Publication Date: 2017-05-24
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, treatment of oxymetal hardmasks with HMDS was not effective in preventing pattern collapse of subsequently applied photoblocks.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Example 1: Prepare the hydroxyl-containing polymer (97 / 3MMA / HEMA copolymer) surface treatment agent as follows. A monomer / initiator containing solution was prepared by adding the following components to a glass vial: 58.2 g methyl methacrylate (MMA), 1.80 g 2-hydroxyethyl methacrylate and 30.0 g propylene glycol methyl ether ethyl acid ester (PGMEA). Shake the vial gently to mix the contents, then place in an ice bath to allow temperature equilibration with the ice bath. Then, 1.80 g of dimethyl 2,2'-azobis(2-methylpropionate) initiator (available from Wako Pure Chemical Industries, Ltd., Japan, trade name V-106) was added to the vial medium, then shake until the initiator is completely dissolved. The vials were then returned to the ice bath until time of use.

[0045] A 250 mL three-necked round bottom flask (equipped with thermocouple, condenser without cooling water circulation, and monomer / initiator feed tubes) containing a magnetic stir bar was placed in a hea...

Embodiment 2

[0047] Example 2 Prepare the polymer (95 / 5MMA / ECPMA) surface treatment agent containing protected carboxyl group according to the procedure of embodiment 1, the difference is to add the following components to the glass vial to prepare monomer / initiator feed solution: 28.5g MMA, 1.5 g 1-ethylcyclopentyl methacrylate, 15 g PGMEA and 0.90 g dimethyl 2,2'-azobis(2-methylpropionate) initiator. A 250mL round bottom flask was filled with 30g PGMEA. The monomer / initiator solution was added to the flask at a rate of 250 μL / 26s. The MMA / ECPMA weight ratio was found to be 95 / 5 with a polymer content of 41.5%.

Embodiment 3

[0048] Embodiment 3-preparation Hf (OBu) acetyl-diethylene glycol copolymer: 5 The 00mL three-necked flask is equipped with a reflux condenser, a mechanical stirrer and a dropping funnel. Add 100g (0.21mol) Hf(OBu) to the reactor 4 (available from Gelest Corporation). The material was stirred vigorously and pentane-2,4-dione (42.5 g, 0.42 mol) was added very slowly over 6 hours. The reactor mixture was stirred overnight at room temperature. The n-butanol generated during the reaction was removed under vacuum, then 800 mL of ethyl acetate was added, and the reaction flask was vigorously stirred at room temperature for 30 minutes. The solution was filtered through a fine frit to remove any insoluble product. Residual solvent was removed under vacuum and an off-white solid was obtained (100.4 g, 90% yield). The Hf(OBu) 2 (acac) 2 The product was used without further purification.

[0049]To a 1 L three-necked flask equipped with a reflux condenser, a stir bar and a hot w...

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Abstract

Hard mask surface treatment. Provided is a method of treating the surface of a hardmask layer comprising inorganic domains having (-M-O-)n bonds, where M is a metal from Groups 3 to 14, and n> 1. The method includes: contacting the surface of the hard mask with a surface treatment composition to coat the surface of the hard mask, wherein the surface treatment composition includes an organic solvent and a surface treatment agent containing a surface active group.

Description

technical field [0001] The present invention mainly relates to the field of semiconductor manufacturing, and further relates to the field of hard masks used in semiconductor manufacturing. Background technique [0002] With the continued reduction of CD and pitch in 193nm immersion lithography, the use of hardmasks in specific layers of IC fabrication has become increasingly popular due to the excellent etch selectivity of hardmask materials. A specific metal hard mask, such as titanium nitride, is applied to the processed wafer by chemical vapor deposition (CVD). In conventional techniques for integrated circuit fabrication, an amorphous carbon hardmask and a silicon hardmask (or silicon anti-reflection layer or SiARC) are applied by CVD or spin coating techniques. Spin-on-metal hardmasks are now gaining traction in the integrated circuit industry, due in part to potential cost reductions and fabrication process simplifications compared to conventional methods. [0003] T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/00G03F1/68
CPCH01L21/0271H01L21/0332H01L21/3105B05D1/005B05D1/02B05D1/18B05D1/26B05D1/28B05D1/30B05D3/02B05D7/16
Inventor D·王P·特雷福纳斯三世J·J·张P-W·庄
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC