A kind of preparation method of the epitaxial graphene back gate transistor of nitrogen-doped SIC substrate

Abstract

The invention discloses a method for manufacturing an epitaxy graphene back gate transistor with a nitrogen-doped SiC substrate. The method includes the steps of carrying out doping on the smooth and even SiC substrate through nitrogen ions generated through a semiconductor ion implantation machine, implanting the nitrogen ions with parameters ranging from 30 kev to 150 kev into the upper half portion of the SiC substrate to serve as a dielectric layer, implanting the nitrogen ions with parameters ranging from 500 kev to 1000 kev into the lower half portion of the SiC substrate to serve as a grid electrode, growing graphene on the SiC substrate with the implanted nitrogen ions in an epitaxy mode, and forming a graphene groove layer. According to the method, the transistor is manufactured directly through the SiC substrate, the grid electrode and the dielectric layer do not need to be deposited, operation is simple, and secondary pollution in the manufacturing process is avoided; the epitaxy-grown graphene is good in electrical property and has the high electron mobility.

Description

technical field [0001] The invention relates to the technical field of field effect transistors, in particular to a graphene field effect transistor and a preparation method thereof. Background technique [0002] Graphene has various excellent properties, with a specific surface area of ​​2630 , with a high carrier mobility of 200,000 , is 100 times that of silicon, and the minimum resistivity is about 10 -6 Ω cm, lower than copper and silver, high thermal conductivity of 5000 W , 10 times that of copper. Graphene is used in the fabrication of transistors, which can work at room temperature. The commonly used method of using graphene to prepare back gate transistors is: first thermally oxidize SiO on the surface of Si base 2 As a dielectric layer, the mask is subjected to photolithography, and after development, SiO is etched using reactive ion etching (RIE) technology. 2 , form a groove with a groove width of 3~8 μm, and then transfer the prepared graphene to the ...

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Problems solved by technology

The commonly used method of using graphene to prepare back gate transistors is: first thermally oxidize SiO on the surface of Si base 2 As a dielectric layer, the mask is subjected to photolithography, and after development, SiO is etched using reactive ion etching (RIE) technology. 2 , form a groove with a groove width of 3~8 μm, and then transfer the prepared graphene to the substrate; in Graphene / SiO 2 / Si surface sputtered TiW / Au as electrodes; the disadvantage of this method is that the process is complex and graphene is easily damaged and polluted during the transfer process

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