Preparation method of boron-11 acid with high abundance

Abstract

The invention discloses a preparation method of boron-11 acid with high abundance, belonging to the field of boron compounds. The preparation method comprises the steps of purifying a raw material, i.e., boron fluoride-11 with high abundance; hydrolyzing boron trifluoride-11; filtering to remove sediments; purifying through ion exchange; crystallizing; filtering to remove a mother liquid; and drying and the like. The boron-11 acid with high abundance, prepared by using the preparation method, is high in purity up to more than 99.9% and can be used as a raw material for preparing compounds related to an isotope of concentrated boron-11. A series of boron-11 acids prepared by using the boron-11 acid with high abundance as the raw material can be used as a doping source of an isotope of boron-11 for preparing semiconductors, and the manufactured semiconductor device has excellent interference and radiation resistance.

Description

technical field [0001] The invention belongs to a boron compound, in particular to a preparation method of high-abundance boron-11 acid. Background technique [0002] Natural boron consists of two stable isotopes 10 B and 11 Composition B, the content is 19.78% respectively 10 B and 80.22% 11 b. 10 B has a strong ability to absorb neutrons, so it is used as a neutron moderator in nuclear reactors to control the operation of the reactor. and 11 B, on the contrary, hardly absorbs neutrons, so it is used as a dopant in the manufacturing process of semiconductor devices, which can effectively improve the conductivity and anti-radiation and anti-interference capabilities of semiconductor devices. When natural boron or boron compounds are used as doping sources for semiconductor device manufacturing processes, boron contains 19.78% 10 B isotopes, thus inevitably introducing large amounts of 10 Doping with B together will result in a fatal negative impact on the performance...

AI Technical Summary

Problems solved by technology

When natural boron or boron compounds are used as doping sources for semiconductor device manufacturing processes, boron contains 19.78% 10 B isotopes, thus inevitably introducing large amounts of 10 Doping with B together, the result is that in some specific use environments, it will have a fatal negative impact on the performance of semiconductor devices, ranging from affecting the operating speed of electronic equipment to causing crashes or even crashes.

[0003] With the increasing integration of integrated circuits, and many special applications such as aerospace, space probes, modern military, supercomputers, cloud computing, high-speed trains, communications, networks, etc., the speed, stability, and With the continuous improvement of reliability and safety requirements, the performance requirements of semiconductor devices, the core devices of manufacturing related facilities, are also getting higher and higher. Some key semiconductor process-related materials are not limited to the purity requirements in the general sense, but have increased To the concept of isotopic purity, conventional natural materials can no longer meet the requirements of technological progress

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