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A kind of preparation method of amorphous silicon film with columnar discrete structure

An amorphous silicon thin film and columnar technology, which is applied in the field of amorphous silicon thin film preparation, can solve problems such as limited energy reserves, and achieve the effects of simple operation, improved monolayer and close-packed properties, and improved light absorption rate.

Active Publication Date: 2016-08-24
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reserves of traditional energy are limited, and the time to support continued mining is less than 100 years. Therefore, before facing the crisis of energy depletion, people need to plan ahead and seek safe, clean, efficient and durable new energy as an alternative

Method used

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  • A kind of preparation method of amorphous silicon film with columnar discrete structure
  • A kind of preparation method of amorphous silicon film with columnar discrete structure
  • A kind of preparation method of amorphous silicon film with columnar discrete structure

Examples

Experimental program
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Effect test

Embodiment 1

[0031] 1. Pretreatment of glass substrate:

[0032] Cut the glass slides into 3cm×3cm square pieces, clean them with acetone, absolute ethanol, and deionized water in sequence, and immerse them in concentrated H 2 SO 4 (mass fraction is 98%) and H 2 o 2 (mass fraction is 30%) in the mixed solution that volume ratio is 3: 1, take out after soaking 8 hours, with strong ammoniacal liquor (mass fraction is 25%), H 2 o 2 (mass fraction is 30%) and deionized water volume ratio of 1:1:3 mixed solution ultrasonically cleaned, cleaned with deionized water and stored in a liquid seal for later use;

[0033] 2. The preparation of a single-layer close-packed PS bead array, the process is as follows figure 1 shown.

[0034] (1) Supersonicate the aqueous solution of PS beads with a mass fraction of 10% for preliminary dispersion for 5 minutes. The diameter of the PS beads is 200nm. Mix and dilute the aqueous solution of PS beads with deionized water until the mass fraction is 0.3%, an...

Embodiment 2

[0048] 1. Pretreatment of glass substrate:

[0049] Cut the glass slides into 3cm×3cm square pieces, clean them with acetone, absolute ethanol, and deionized water in sequence, and immerse them in concentrated H 2 SO 4 (mass fraction is 98%) and H 2 o 2 (mass fraction is 30%) in the mixed solution that volume ratio is 3: 1, take out after soaking 8 hours, with strong ammoniacal liquor (mass fraction is 25%), H 2 o 2 (mass fraction is 30%) and deionized water volume ratio of 1:1:3 mixed solution ultrasonically cleaned, cleaned with deionized water and stored in a liquid seal for later use;

[0050] 2. The preparation of a single-layer close-packed PS bead array, the process is as follows figure 1 shown.

[0051] (1) Supersonicate the PS bead solution with a mass fraction of 10% for 5 minutes for preliminary dispersion, the diameter of the PS bead is 500nm, mix and dilute the PS bead solution with deionized water until the mass fraction is 0.3%, and then take The diluted ...

Embodiment 3

[0065] 1. Pretreatment of glass substrate:

[0066] Cut the glass slides into 3cm×3cm square pieces, clean them with acetone, absolute ethanol, and deionized water in sequence, and immerse them in concentrated H 2 SO 4 (mass fraction is 98%) and H 2 o 2 (mass fraction is 30%) in the mixed solution that volume ratio is 3: 1, take out after soaking 8 hours, with strong ammoniacal liquor (mass fraction is 25%), H 2 o 2 (mass fraction is 30%) and deionized water volume ratio of 1:1:3 mixed solution ultrasonically cleaned, cleaned with deionized water and stored in a liquid seal for later use;

[0067] 2. The preparation of a single-layer close-packed PS bead array, the process is as follows figure 1 shown.

[0068] (1) Preliminarily disperse the PS pellet solution with a mass fraction of 10% by ultrasonication for 5 minutes. The diameter of the PS pellet is 1000 nm. Mix and dilute the PS pellet solution with deionized water until the mass fraction is 0.3%, and then take the ...

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Abstract

The invention belongs to the technical field of silicon nanometer material preparation, in particular to a method for preparing an amorphous silicon membrane with a columnar individually-erected structure. The method includes the steps of distributing densely-distributed polystyrene (PS) small balls on a glass substrate, conducting silicon plating through a magnetron sputtering method, and then obtaining individually-erected silicon nanometer column arrays. By preparing the nanometer column array structure and adjusting and controlling the array structure, the optical absorption rate of the amorphous silicon membrane is greatly improved. The method is low in cost, easy and convenient to operate, high in adjustability and obvious in performance improvement, and can be widely applied to silicon-based solar cells.

Description

technical field [0001] The invention belongs to the technical field of silicon nanometer material preparation, and in particular relates to a method for preparing an amorphous silicon film with a columnar discrete structure. Background technique [0002] In today's world, the issues of energy and environment have received more and more attention, and have become a huge challenge in the development of human beings. Carbon dioxide emitted by oil and coal combustion causes the greenhouse effect, and PM2.5 caused by vehicle exhaust and factory smoke exceeds the standard, etc., all of which have directly affected our daily lives. The reserves of traditional energy are limited, and the time to support continued mining is less than 100 years. Therefore, before facing the crisis of energy depletion, people need to plan ahead and seek safe, clean, efficient and durable new energy as an alternative. [0003] The photovoltaic energy generated by solar cells is considered to be the mos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20C03C17/42C23C14/35
CPCB82Y30/00B82Y40/00H01L21/02422H01L21/02532H01L21/02592H01L21/02603H01L21/02631H01L31/202Y02E10/50Y02P70/50
Inventor 李正操袁方达
Owner TSINGHUA UNIV