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Etching liquid, etching method and surface roughening method for GaP layer of LED chip

A technology of LED chip and surface roughening, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost and poor effect, and achieve the effect of easy operation, simple process and mild conditions

Active Publication Date: 2014-08-06
马鞍山太时芯光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the problems of high cost and poor effect of the existing GaP surface roughening of LED chips, the present invention provides an etching solution for the GaP layer of LED chips, an etching method and a surface roughening method. The etching solution has simple components and is safe to use Effective, after being applied to roughen the surface of the GaP layer of the LED chip, it can significantly improve the light extraction efficiency of the chip, without causing an increase in the surface contact voltage of the LED chip, and has no effect on product reliability

Method used

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  • Etching liquid, etching method and surface roughening method for GaP layer of LED chip
  • Etching liquid, etching method and surface roughening method for GaP layer of LED chip
  • Etching liquid, etching method and surface roughening method for GaP layer of LED chip

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Embodiment 1

[0039] like figure 1 , figure 2 and image 3 As shown, an etching solution, an etching method and a method for roughening the surface of the GaP layer of an LED chip, the etching solution is composed of hydrochloric acid, phosphoric acid, sulfuric acid and hydrogen peroxide, and the volume fractions of each component are respectively: hydrochloric acid is 15%, phosphoric acid is 40%, sulfuric acid is 13%, hydrogen peroxide is 32%. Wherein the massfraction of hydrochloric acid is 37%, the massfraction of phosphoric acid is 20%, the massfraction of sulfuric acid is 70%, the massfraction of hydrogen peroxide is 75% the step of surface roughening of LED chip GaP layer is: (a) make mask plate, There are circular etching holes with a diameter of 5 μm and P-side electrodes on the mask plate, the distance between the etching holes is 3 μm, and the P-side electrodes are located in the center of the mask plate; (b) photolithography, using the mask plate made in step (a) Carry out ph...

Embodiment 2

[0042] Same as Example 1, the difference is that the volume fractions of the components of the etching solution are: 10% hydrochloric acid, 40% phosphoric acid, 10% sulfuric acid, 40% hydrogen peroxide, and the roughening steps of the GaP layer surface of the LED chip are the same as in Example 1 , the difference is that the flow rates of the etching gas in step (c) are respectively: wherein the volume ratio of boron trichloride, ethylene, argon and helium is 15:1:15:20, the etching time is 150s, and the etching time is 150s. Erosion depth is In step (ii), sonicate in a water bath at 45°C for 2 minutes; in step (iii), sonicate in a water bath at 60°C for 1 minute.

[0043] The red and yellow LED chip whose surface is roughened by the above method has a chip size of 7mil, the diameter of the upper layer of the etched hole after etching is between 7-8 μm, and the diameter of the lower layer is between 5-6 μm. Under 20mA current, The axial light intensity of the LED chip reache...

Embodiment 3

[0045] Same as Example 1, the difference is that the volume fractions of the components of the etching solution are: 20% hydrochloric acid, 30% phosphoric acid, 20% sulfuric acid, 30% hydrogen peroxide, and the roughening steps of the GaP layer surface of the LED chip are the same as in Example 1 , the difference is that the etching gas in step (c) is a mixed gas of boron trichloride, ethylene, argon and helium, wherein the volume ratio of boron trichloride, ethylene, argon and helium is 15:2 :17:20, the chamber pressure is maintained at 40Torr during etching, and the etching depth is controlled by changing the etching time. The etching time is 100s, and the etching depth is Sonicate in a water bath at 45°C for 3 minutes in step (ii); sonicate in a water bath at 60°C for 2 minutes in step (iii).

[0046] The red and yellow LED chip whose surface is roughened by the above method has a chip size of 7mil, the diameter of the upper layer of the etched hole after etching is betwee...

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Abstract

The invention discloses an etching liquid, an etching method and a surface roughening method for a GaP layer of an LED chip, belonging to the field of surface roughening. The etching liquid comprises hydrochloric acid, phosphoric acid, sulfuric acid and hydrogen peroxide. The surface roughening method of the LED chip combines a plasma etching process with a wet etching process, so that etching holes are bowl-shaped, the total reflection of emergent light can be effectively reduced, and the light emergent efficiency of the LED chip is improved. The surface roughening method has the advantages of simple process, reasonable design and easiness and convenience in operation, the rise of surface contact voltage of the LED chip cannot be caused, and the product reliability cannot be influenced.

Description

technical field [0001] The invention belongs to the field of new materials, in particular, relates to an etching solution for an LED chip GaP layer, an etching method and a surface roughening method, more specifically, relates to a method capable of efficiently roughening the surface of a GaP layer of an LED production method. Background technique [0002] With the advent of light-emitting diodes (LEDs) in 1960, LEDs have been widely used in our surroundings, which can not only be used to improve the quality of life, but also play a pivotal role in our daily lives, such as LED applications can be seen in various indicator lights, display light sources, and lighting equipment. Compared with traditional lighting sources such as fluorescent lamps and incandescent tungsten bulbs, LEDs have the advantages of low power consumption, long life, low calorific value, small size, environmental protection and energy saving, etc., and are regarded as the next generation of lighting devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/16H01L33/22H01L33/00
Inventor 廖伟秦坤李有群廉鹏
Owner 马鞍山太时芯光科技有限公司
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