A diode selection element array structure and manufacturing method

Abstract

The invention discloses a diode selection element array structure manufacturing method. The diode selection element array structure manufacturing method includes forming shallow isolation grooves on a P-type semiconductor substrate at intervals, and forming blank posts among the shallow isolation grooves, wherein one of the blank posts is a P-tie blank post, and the rest are N-tie blank posts; filling the insulation layer in the shallow isolation grooves; forming an N trap on the P-type semiconductor substrate; burying a first P-type diffusion layer on the N trap; forming N-type diffusion layers on the N-tie blank posts, forming wolfram plugs on the N-type diffusion layers, and connecting the wolfram plugs with the N-type diffusion layers to form a first electrode of a diode; extending the P-tie blank posts to form second P-type diffusion layers, forming wolfram plugs on the second P-type diffusion layers, and connecting the wolfram plugs with the second P-type diffusion layers to form a second electrode of the diode; forming an N-type diffusion layer on the upper layer of one side of the N trap and forming another wolfram plug on the upper layer of the N-type diffusion layer and connecting the wolfram plug with the N-type diffusion layer to form a contact electrode of the N trap. The diode selection element array structure manufacturing method is simple in process, and manufacturing cost is saved; a diode selection element array structure formed by the manufacturing method is good in quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a diode selection element array structure and a manufacturing method. Background technique [0002] Phase change random access memory has the characteristics of high read speed, low power, high capacity, high reliability, high write and erase times, low operating voltage / current and low cost. It is suitable for combining with CMOS technology and used as a higher density independent format or embedded memory applications. [0003] A phase change random access memory includes a storage node having a phase change layer, a transistor connected to the storage node, and a PN junction diode connected to the transistor. Depending on the voltage applied to it, the phase change layer changes from crystalline to amorphous, or vice versa. When the applied voltage is the set voltage, the phase change layer changes from an amorphous state to a crystalline state. When the applied volt...

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Problems solved by technology

[0005] In the prior art, epitaxial silicon or selective epitaxial silicon is used as material to form PN junction diodes in phase change random access memory, and the manufacturing cost is expensive; in addition, due to the high deposition temperature of epitaxial silicon or selective epitaxial silicon, the requirements for the substrate surface are high, so that The process of manufacturing PN junction diodes is complex and takes a long time; at the same time, PN junction diodes are formed by stacking on the surface of the substrate, which has material quality problems

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