Method for preparing graphene by chemical vapor deposition

A chemical vapor deposition and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of loss of electrical conductivity, low quality of graphene, difficult to restore graphite, etc., and achieve excellent electrical conductivity, high light transmittance, and high transparency Effect

Inactive Publication Date: 2014-09-10
SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The development time of this method is short, and many theoretical and technical problems still cannot be broken through at this stage, and further exploration is needed
The oxidation-reduction method is to oxidize graphite to obtain graphene oxide dispersed in the solution, and then reduce it with a reducing agent to prepare graphene; its cost is low and its yield is high, but it is difficult to completely reduce graphite completely oxi

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  • Method for preparing graphene by chemical vapor deposition

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Example Embodiment

[0023] Example 1

[0024] This embodiment provides a chemical vapor deposition method to prepare graphene, which is prepared through the following steps:

[0025] 1) Purify the copper alloy substrate: The copper alloy is washed in a 15% hydrochloric acid solution, 50% acetone and 75% ethanol solution in order for 10 minutes, and dried in a nitrogen environment at a temperature of 80°C;

[0026] 2) Place the copper alloy: Place the copper alloy in a chemical vapor deposition (CVD) equipment in parallel, and vacuum the CVD equipment to within 1mTorr;

[0027] 3) Remove the oxide film on the surface of the copper alloy: Raise the copper alloy to 980°C within 50 minutes, and then introduce 650sccm of hydrogen from the bottom inlet of the CVD equipment, and keep the pressure in the CVD equipment at 0.1-90 Torr to remove the copper alloy surface 的oxide film;

[0028] 4) Preparation of graphene: keep the pressure in the CVD equipment at 0.1-90 Torr, the temperature of the copper alloy substrat...

Example Embodiment

[0031] Example 2

[0032] This embodiment provides a chemical vapor deposition method to prepare graphene, which is prepared through the following steps:

[0033] 1) Purify the copper alloy substrate: the copper alloy is washed in a 10% hydrochloric acid solution, 60% acetone and 65% ethanol solution in sequence for 10 minutes, and dried in a nitrogen environment at a temperature of 75°C;

[0034] 2) Place the copper alloy: Place the copper alloy in a chemical vapor deposition (CVD) equipment in parallel, and vacuum the CVD equipment to within 1mTorr;

[0035] 3) Remove the oxide film on the surface of the copper alloy: Raise the copper alloy to 980°C within 50 minutes, and then introduce 650sccm of hydrogen from the bottom inlet of the CVD equipment, and keep the pressure in the CVD equipment at 0.1-90 Torr to remove the copper alloy surface 的oxide film;

[0036] 4) Preparation of graphene: maintain the pressure in the CVD equipment at 0.1-90 Torr, and the temperature of the copper all...

Example Embodiment

[0039] Example 3

[0040] This embodiment provides a chemical vapor deposition method to prepare graphene, which is prepared through the following steps:

[0041] 1) Purify the copper alloy substrate: The copper alloy is washed sequentially in 18% hydrochloric acid solution, 50% acetone, and 65% ethanol solution, each in a mass fraction of 18% hydrochloric acid solution, ultrasonically cleaned for 10 minutes, and dried in a nitrogen environment at a temperature of 80°C;

[0042] 2) Place the copper alloy: Place the copper alloy in a chemical vapor deposition (CVD) equipment in parallel, and vacuum the CVD equipment to within 1mTorr;

[0043] 3) Remove the oxide film on the surface of the copper alloy: Raise the copper alloy to 980°C within 55 minutes, and then introduce hydrogen at a flow rate of 700sccm from the bottom inlet of the CVD equipment, and keep the pressure in the CVD equipment at 0.1-90 Torr to remove the copper alloy surface 的oxide film;

[0044] 4) Preparation of graphene...

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Abstract

The invention discloses a method for preparing graphene by chemical vapor deposition. The method comprises the steps of firstly, purifying a copper alloy substrate; secondly, placing a copper alloy in a chemical vapor deposition (CVD) device; thirdly, removing an oxide film on the surface of the copper alloy; fourthly, preparing graphene: maintaining the pressure within the CVD device to be 0.1-90Torr and the temperature of the copper alloy substrate to be 800-980 DEG C, then introducing hydrogen and methane gas, wherein the flow ratio of hydrogen to methane gas is (1:1) to (1:10) and continuously introducing hydrogen and methane gas for 50-70 minutes; fifthly, obtaining a graphene product; and sixthly, purifying the graphene product to obtain graphene. The preparation method disclosed by the invention is simple in preparation process and low in cost and is suitable for large-scale production and large-area graphene products with high transmittance, high quality and high purity can be produced by the method.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by chemical vapor deposition. Background technique [0002] Graphene, the monoatomic layer of graphite, is a two-dimensional structure in which carbon atoms are arranged in a honeycomb shape, and is also the basic unit of other low-dimensional carbon materials such as fullerenes and carbon nanotubes. According to the number of layers, graphene can be divided into single-layer graphene, double-layer graphene, and few-layer graphene. Graphene has been studied for a long time, but the truly independent and stable graphene was obtained by Geim et al. from the University of Manchester in the United Kingdom by stripping highly oriented graphite through adhesive tape. Since the discovery of graphene, due to its excellent performance and huge application prospects, it has triggered a research boom in the fields of physics and material science. However, ...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/186
Inventor 金闯杨晓明
Owner SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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