Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for direct electron beam nano-etching or printing under wet environment

一种湿环境、电子束的技术，应用在电路、放电管、电气元件等方向，能够解决电子束曝光技术没有得到广泛的大规模生产应用、电子束刻蚀工艺复杂、生产效率低下等问题，达到有利于大规模工业化生产、成本低、生产效率高的效果

Active Publication Date: 2014-09-10
BEIJING UNIV OF TECH
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen from the above operation steps that the process required for electron beam etching is very complicated, and the equipment required is very expensive
In addition, because a large amount of organic solvents such as photoresist, developer, and cleaning agent are used in electron beam lithography, the environmental pollution is extremely serious, and the production efficiency is low.
Therefore, so far, electron beam lithography technology has not been widely used in large-scale production. All these problems urgently need the industry to propose an electron beam lithography technology with lower cost, lower environmental pollution and higher processing efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for direct electron beam nano-etching or printing under wet environment
  • Method for direct electron beam nano-etching or printing under wet environment
  • Method for direct electron beam nano-etching or printing under wet environment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0061] In a layer of Si with a thickness of 20nm 3 N 4 (select Si 3 N 4 The film has no special purpose in all the following examples, it is only designed for the convenience of sealing in the follow-up process) on the film, a layer of VO with a thickness of 20nm is plated with magnetron sputtering. 2 film.

[0062] to VO 2 The film is subjected to hydrophilic treatment, and the gas used to process the sample is a mixed gas of argon and oxygen, the gas ratio is 4:1 (the gas pressure has no effect on the subsequent treatment), and the treatment time is 30s.

[0063] Hydrophilic treated VO 2 Drop a drop of deionized water on the surface of the sample, and spread the deionized water on the surface of the sample to form a water film layer with a thickness of 200nm.

[0064] Then choose another piece of Si with a thickness of 20nm 3 N 4 The film is placed on the water layer, and the water layer and the upper and lower layers of Si 3 N 4 The film is sealed with vacuum seal...

experiment example 2

[0068] Choose a piece of Si with a thickness of 20nm 3 N 4 The film is subjected to hydrophilic treatment. The gas used to process the sample is a mixed gas of argon and oxygen, the gas ratio is 4:1, and the processing time is 30s.

[0069] Si in hydrophilic treatment 3 N 4 The proportion of one drop on the film is 0.1g / cm 3 Vaseline alcohol solution, and then hang the solution on the Si 3 N 4 On the film, a solution film with a thickness of 200nm was formed.

[0070] Then choose another piece of Si with a thickness of 20nm 3 N 4 The amorphous film is placed on the solution film layer, and the sample device is sealed with vacuum sealing grease, as shown in Scheme 1 image 3 shown.

[0071] The sealed sample is placed on the TEM (transmission electron microscope) sample rod, and then placed in the TEM (voltage 200keV, at this time the electron beam current density 1e - ·A -2 ·s -1 ), turn on the electron beam, converge the electron beam spot into an electron beam sp...

Embodiment example 3

[0074] The VO in the above implementation case 1 2 thin film, ZnO, Fe 2 o 3 , MnO 2 , CeO 2 ,Co 3 o 4 , CuO, TiO 2 , SnO 2 , MgO, Al 2 o 3 , Fe 3 o 4 Material substitution.

[0075] Hydrophilic treatment was performed on each film. The gas used to process the samples was a mixed gas of argon and oxygen, the gas ratio was 4:1 (the gas pressure has no effect on the subsequent processing), and the processing time was 30s.

[0076] Drop a drop of deionized water on the surface of each sample after hydrophilic treatment, and spread the deionized water on the surface of the sample to form a water film layer with a thickness of 200nm.

[0077] Then choose Si with a thickness of about 20nm 3 N 4 The film is placed on the water layer, and the water layer and the upper and lower layers of Si 3 N 4 The film is sealed with vacuum sealing grease, and the packaged samples are as follows: image 3 shown.

[0078] The sealed sample is placed on the TEM (transmission electron...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
composition ratioaaaaaaaaaa
energyaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for direct electron beam nano-etching or printing under wet environment and belongs to the electronic exposure field. The method for direct electron beam nano-etching or printing under wet environment includes that attaching a layer of solution, a wet atmosphere layer or a wet environment curing layer to the surface of a substrate to be etched or printed, placing in an electron beam exposure device to expose the electron beam to etch or print a needed nano-micro-machining pattern on the substrate. According to the direct electron beam nano-etching or printing method, the wet environment solution is de-ionized water, metal ion containing solution, complex or other environment-friendly solution. By means of the method for direct electron beam nano-etching or printing under wet environment, the nano-micro-machining finished product is obtained after exposing the electron beam, photoresist and other chemical ingredients needed for the traditional electron beam etching or printing and developing, fixing, rinsing, etching, gold plating and other complex processing process needed for the traditional electron beam etching or printing are omitted, the electron beam exposing speed rate is fast, the electron beam photo-etching or printing line width is uniform, the line width size is the same with the electron beam size, and therefore, the production efficiency is greatly improved, and the nano-micro-machining production cost is lowered.

Description

technical field [0001] The invention designs a new nanoscale microstructure electron beam etching or printing method, which belongs to the field of electron exposure, and specifically adopts a wet environment electron beam exposure method, which can be used to make nanoscale patterns of various shapes. Background technique [0002] With the continuous development of microelectronics technology and the continuous improvement of application market demand, the finishing of nano-scale materials has become the core foundation of the micro-processing industry. Due to the limitation of the wavelength of light, the traditional photolithography processing technology can no longer meet the increasing demand of human beings for nanoscale fine processing. The precision of lithography technology is mainly affected by the scattering of photons on the wavelength scale, so the shorter the wavelength used, the higher the precision of lithography. According to de Broglie's matter wave theory...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02G03F7/20
CPCG03F7/2037H01L21/0277H01L21/31111H01J2237/31796G03F7/2059G03F7/20G03F7/70858
Inventor 隋曼龄卢岳陈福荣
Owner BEIJING UNIV OF TECH