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Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method

A sandwich type, epitaxy technology, applied in the field of microelectronics, can solve the problems of easy introduction of surface defects, low energy conversion rate, large leakage current of devices, etc., and achieve the effect of improving energy utilization rate, energy conversion rate, and working voltage.

Inactive Publication Date: 2014-09-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the leakage current of the device is large, and the energy conversion rate is low.

Method used

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  • Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method
  • Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method
  • Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Embodiment 1, preparation sandwich radioactive source is Ni 63 , PIN-type β-irradiated cells with a thickness of β-radiation source layer of 4 μm in series sandwich epitaxial GaN.

[0050] Step 1: Make the upper PIN knot.

[0051] (1a) Clean the p-type SiC substrate to remove surface contaminants:

[0052] (1a.1) Set the doping concentration to l.5x10 18 cm -3 Soak the p-type SiC substrate in NH4OH+H2O2 reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0053] (1a.2) Soak the p-type SiC substrate after removing the surface organic residues with HCl+H2O2 reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0054] (1b) Epitaxial growth of P-type SiC epitaxial layer:

[0055] An aluminum-doped P-type doped epitaxial layer is epitaxially grown on the cleaned p-type SiC substrate by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1550°C, th...

Embodiment 2

[0079] Embodiment 2, preparation sandwich radioactive source is Ni 63 , PIN-type β-irradiated cells with a thickness of β-radiation source layer of 6 μm in series sandwich epitaxial GaN.

[0080] Step 1: Make the upper PIN knot.

[0081] 1a) cleaning the p-type SiC substrate to remove surface contaminants, the doping concentration of the p-type SiC substrate is 1.5×10 18 cm -3 :

[0082] This step is the same as step (1a) of Embodiment 1.

[0083] 1b) Epitaxial growth of P-type SiC epitaxial layer:

[0084] An aluminum-doped P-type SiC epitaxial layer is epitaxially grown on the cleaned p-type SiC substrate by chemical vapor deposition CVD. Under the conditions of epitaxy temperature of 1550°C, pressure of 100mbar, reaction gas of silane and propane, carrier gas of pure hydrogen, and impurity source of trimethylaluminum, the aluminum doping concentration is 3x10 15 cm -3 , a P-type SiC epitaxial layer with a thickness of 22 μm.

[0085] 1c) Epitaxial growth of N-type G...

Embodiment 3

[0103] Embodiment 3, preparation sandwich radioactive source is Pm 147 , PIN-type β-irradiated cells with tandem sandwich epitaxial GaN with a thickness of β-radiation source layer of 14 μm.

[0104] Step A: Make the upper PIN knot.

[0105] A1) cleaning p-type SiC substrate, to remove surface pollutants, the doping concentration of this p-type SiC substrate is 1.5×10 18 cm -3 .

[0106] This step is the same as step (1a) of Embodiment 1.

[0107] A2) Epitaxial growth of P-type SiC epitaxial layer: on the cleaned p-type SiC substrate, an aluminum-doped P-type doped epitaxial layer is epitaxially grown by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity source is trimethylaluminum, and the aluminum doping concentration is 4x10 15 cm -3 , a P-type SiC epitaxial layer with a thickness of 30 μm.

[0108] A3) ...

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Abstract

The invention discloses a series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and a preparation method which mainly solve the problem that the energy conversion rate and the output power of a current nuclear battery are low. The series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery comprises an upper PIN junction, a lower PIN junction and a beta irradiation source layer, wherein the upper PIN junction and the lower PIN junction are connected in series; the upper PIN junction sequentially comprises an N-type epitaxial layer ohmic contact electrode, an N-type GaN epitaxial layer, a P-type SiC epitaxial layer, a p-type SiC substrate and a P-type ohmic contact electrode from bottom to top; the lower PIN junction sequentially comprises an N-type ohmic contact electrode, an n-type SiC substrate, an N-type SiC epitaxial layer, a P-type GaN epitaxial layer and a P-type epitaxial layer ohmic contact electrode from bottom to top; the beta irradiation source layer is clamped between the epitaxial layer ohmic contact electrode of the upper PIN junction and the epitaxial layer ohmic contact electrode of the lower PIN junction so that high-energy beta particles can be made full use of. The series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery has the advantages that the contact area between an irradiation source and a semiconductor is large, the utilization rate of nuclear raw materials and the energy collection rate are high, the output voltage of the battery is high, and the battery can supply power to a small circuit for a long time.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a structure and a preparation method of a semiconductor device, in particular to a silicon carbide-based series sandwich epitaxial GaN PIN type beta irradiation battery and a preparation method thereof, which can be used for micro-circuits such as micro-nano electromechanical systems And aerospace, deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more concerned. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable ...

Claims

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Application Information

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IPC IPC(8): G21H1/06
Inventor 郭辉赵亚秋张艺蒙王悦湖张玉明
Owner XIDIAN UNIV
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