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Black silicon preparation technology combining ion beam surface activation sputtering and reactive-ion etching

A technology of reactive ion etching and surface activation, applied in sputtering plating, ion implantation plating, metal material coating process, etc. The effect of high etching accuracy, cost reduction, and simplified production process

Pending Publication Date: 2014-09-24
余瑞琴
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the above-mentioned prior art, the present invention designs a black silicon preparation process combining ion beam surface activation sputtering and reactive ion etching, which solves the problems that the existing black silicon preparation process is complicated and the etching precision is not high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030]A black silicon preparation process combining ion beam surface activation sputtering and reactive ion etching, including steps:

[0031] (1) Place the silicon wafer in a vacuum chamber whose vacuum degree is less than 10 -6 mbar;

[0032] (2) Uniformly irradiate the silicon wafer with a nitrogen ion beam at an irradiation angle of 50° to 70° from the normal direction of the silicon wafer surface. The energy of the nitrogen ion beam is 2keV to 20keV, and the irradiation dose is 1x10 17 / cm 2 magnitude to 2x10 17 / cm 2 order of magnitude, the ion beam intensity is any beam intensity, when irradiating, the silicon wafer is fixed, and a periodic striped nanostructure is formed on the surface of the silicon wafer;

[0033] Alternatively, the silicon wafer rotates around its normal during irradiation, and periodic dot-like nanostructures are formed on the surface of the silicon wafer.

[0034] (3) Place the silicon wafer irradiated in step (2) in a reactive ion etching va...

Embodiment 2

[0041] A black silicon preparation process combining ion beam surface activation sputtering and reactive ion etching, including steps:

[0042] (1) Place the silicon wafer in a vacuum chamber whose vacuum degree is less than 10 -6 mbar;

[0043] (2) Uniformly irradiate the silicon wafer with an inert gas ion beam at an irradiation angle of 0° to 30° from the normal direction of the silicon wafer surface, the energy of the argon ion beam is 2keV to 20 keV, and the irradiation dose is 3x10 17 / cm 2 order of magnitude, the ion beam intensity is any beam intensity; at the same time, a single co-deposited surfactant ion beam is used to uniformly irradiate the silicon wafer in a direction parallel to the normal direction of the silicon wafer surface, and the irradiation dose is 3x10 17 / cm 2 When irradiated, the silicon wafer is fixed, and random dot-like nanostructures are generated on the surface of the silicon wafer;

[0044] (3) Place the silicon wafer irradiated in step (2)...

Embodiment 3

[0048] The black silicon preparation process combined with ion beam surface activation sputtering and reactive ion etching is different from Example 2 in that this example uses a single co-deposited surfactant ion beam with an angle of 1° to 90° in the normal direction of the silicon wafer surface. The silicon wafer is irradiated uniformly at any angle in °, and a periodic double-symmetric point nanostructure or a periodic stripe nanostructure is formed on the surface of the silicon wafer.

[0049] In this embodiment, after changing the angle of the co-deposited surfactant ion beam, a different nanostructure "self-masking mask" is formed on the surface of the silicon wafer.

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PUM

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Abstract

The invention discloses a black silicon preparation technology combining ion beam surface activation sputtering and reactive-ion etching. The problems that an existing black silicon preparation technology is complex and low in etching accuracy are solved. The black silicon preparation technology comprises the steps that first, a silicon wafer is placed in a vacuum chamber; second, a low-energy ion beam is used for evenly irradiating the silicon wafer, and periodical nanostructures are evenly formed on the surface of the silicon wafer; third, the silicon wafer irradiated in the second step is placed in the vacuum chamber for reactive-ion etching to generate black silicon. According to the black silicon preparation technology combining ion beam surface activation sputtering and reactive-ion etching, in the whole black silicon preparation process, the parameters involving the form of the silicon-surface nanostructures and the thickness of a black silicon layer and influencing the light reflection characteristic of the black silicon are controlled separately, the nanostructures on the surface of the black silicon and the thickness of the black silicon layer can be designed in advance, and the purpose of optimizing a black silicon structure so that any different requirements can be met is achieved; the silicon-surface nanostructures and the thickness of the black silicon layer can be controlled manually and flexibly, consumption of the black silicon layer is small, etching accuracy is high, the technological process is simple, and great practical value is achieved.

Description

technical field [0001] The invention relates to a black silicon preparation process, in particular to a black silicon preparation process combined with ion beam surface activation sputtering and reactive ion etching, and belongs to the technical field of semiconductor materials and device manufacturing for solar cell devices and other materials. Background technique [0002] Black silicon is a silicon material with low reflectivity. Compared with conventional silicon materials, it has a superior ability to absorb light and can be used in the solar cell industry and other semiconductor industries. [0003] The existing black silicon preparation processes mainly include: reactive ion etching (RIE), plasma etching (PE), metal nanoparticle assisted etching (MAE), laser processing (LP - femtosecond laser scanning method etching) and plasma Immersion ion implantation (PIII), etc. Among them, RIE, MAE and PIII are relatively common in the current research on black silicon solar ce...

Claims

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Application Information

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IPC IPC(8): H01L21/67C23C14/46
CPCH01L31/1804B82Y40/00H01L21/2033H01L21/3065
Inventor 余瑞琴
Owner 余瑞琴