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LED epitaxial wafer with quantum well barrier layer, growing method and LED structure

A technology of LED epitaxial wafer and quantum well layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complex means, increase the concentration of quantum well holes, reduce stress, etc., to increase luminous efficiency, improve injection, Increase the effect of injection

Active Publication Date: 2014-10-08
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This epitaxial growth method uses the lattice coefficient of InN to smoothly transition from GaN to AlGaN, reduces stress, and increases the hole concentration of quantum wells, but the disadvantage is that the method is relatively complicated.

Method used

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  • LED epitaxial wafer with quantum well barrier layer, growing method and LED structure
  • LED epitaxial wafer with quantum well barrier layer, growing method and LED structure
  • LED epitaxial wafer with quantum well barrier layer, growing method and LED structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The present invention adopts Metal Organic Chemical Vapor Deposition (MOCVD, Metalorganic Chemical Vapor Deposition) growth, preferably, the sapphire of (0001) crystal orientation is selected as the substrate, high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas is used as the carrier gas, and the metal-organic source and the nitrogen source are trimethylgallium (TMGa), trimethylindium (TMIn), triethylgallium (TEGa), trimethylaluminum (TMAl) and ammonia ( NH 3 ), the n-type dopant is silane (SiH 4 ), the p-type dopant is magnesium dicene (Cp 2 Mg).

[0050] The method for growing an LED epitaxial wafer with a quantum well barrier layer includes the following growth steps in sequence:

[0051] a. Treat the sapphire substrate at high temperature for 5 minutes under a hydrogen atmosphere of 50L-60L;

[0052] b. Growing a low-temperature GaN buffer layer on a sapphire substrate;

[0053] c. Continue to grow the non-doped GaN layer;...

Embodiment 2

[0072] The growth method of the present embodiment is the same as the a, b, c, d, f, g, h growth steps of embodiment 1, step e:

[0073] The pressure of the reaction chamber is maintained at 400mbar, the low temperature is 750°C, and NH 3 , TEGa, TMIn grow In-doped In with a thickness of 3.5nm x Ga (1-x) N layer (x=0.15~0.25), In doping concentration 1E+20~3E+20atom / cm 3 , heated up to 850°C and fed NH 3 , TEGa, TMIn grow In with a thickness of 15nm y Ga (1-y) N layer (y=0.05~0.10), In doping concentration 1E+18~2E+18atom / cm 3 ;In x Ga (1-x) N / In y Ga (1-y) The period number of the N quantum well layer is 5.

[0074] Next, the pressure of the reaction chamber is maintained at 400mbar, the low temperature is 700-750°C, and NH 3 , TEGa, TMIn grow In-doped In with a thickness of 3.5nm m Ga (1-m) N layer (m=0.15-0.25), In doping concentration 1E+20~3E+20atom / cm 3 , heated up to 850°C, fed NH 3 , TEGa, TMAl growth of Al with a thickness of 15nm n Ga (1-n) N layer (...

Embodiment 3

[0087] The growth method of the present embodiment is the same as the a, b, c, d, f, g, h growth steps of embodiment 1, step e:

[0088] The pressure of the reaction chamber is maintained at 300mbar, the low temperature is 750°C, and NH 3 , TEGa, TMIn grow In-doped In with a thickness of 2.8nm x Ga (1-x) N layer (x=0.15~0.25), In doping concentration 1E+20~3E+20atom / cm 3 , heated up to 850°C and fed NH 3 , TEGa, TMIn grow In with a thickness of 10nm y Ga (1-y) N layer (y=0.05~0.10), In doping concentration 1E+18~2E+18atom / cm 3 ;In x Ga (1-x) N / In y Ga (1-y) The period number of the N quantum well layer is 6.

[0089] Next, the pressure of the reaction chamber was maintained at 300mbar, the low temperature was 750°C, and NH 3 , TEGa, TMIn grow In-doped In with a thickness of 2.8nm m Ga (1-m) N layer (m=0.15-0.25), In doping concentration 1E+20~3E+20atom / cm 3 , heated up to 850°C, fed NH 3 , TEGa, TMAl grow Al with a thickness of 10-15nm n Ga (1-n) N layer (n=0....

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Abstract

The invention discloses an LED epitaxial wafer with a quantum well barrier layer, a growing method and an LED structure. The LED epitaxial wafer with the quantum well barrier layer structurally comprises a substrate, a GaN buffer layer, an undoped GaN layer, an n-type GaN layer, a light-emitting layer MQW, a P-type AlGaN layer and a P-type GaN layer sequentially from bottom to top. The light-emitting layer MQW comprises a combination of an InxGa(1-x)N / InyGa(1-y)N quantum well layer and an InmGa(1-m)N / AlnGa(1-n)N quantum well layer, wherein x ranges from 0.15 to 0.25, y ranges from 0.05 to 0.10, m ranges from 0.15 to 0.25 and n ranges from 0.10 to 0.15. The number of electrons overflowing out of a quantum well is decreased, hole injection to the quantum well is improved, concentration of the electrons and holes in the quantum well is improved, device luminous efficiency is improved, and light output is improved by about 8%.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an LED epitaxial wafer with a quantum well barrier layer, a growth method and an LED structure. Background technique [0002] Gallium nitride-based materials, including InGaN, GaN, and AlGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8-6.2eV. They have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. It is an ideal material for the production of short-wavelength high-brightness light-emitting devices, ultraviolet light detectors and high-temperature and high-frequency microelectronic devices. It is widely used in full-color large-screen displays, LCD backlights, signal lights, lighting and other fields. The production of domestic GaN-based LED blue-green light-emitting devices involves the light-emitting layer is composed of multiple quantum well l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/02H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/325
Inventor 林传强
Owner XIANGNENG HUALEI OPTOELECTRONICS
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