LED epitaxial wafer with quantum well barrier layer, growing method and LED structure

A technology of LED epitaxial wafer and quantum well layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complex means, increase the concentration of quantum well holes, reduce stress, etc., to increase luminous efficiency, improve injection, Increase the effect of injection
CN104091870AActive Publication Date: 2014-10-08XIANGNENG HUALEI OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2014-10-08

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Abstract

The invention discloses an LED epitaxial wafer with a quantum well barrier layer, a growing method and an LED structure. The LED epitaxial wafer with the quantum well barrier layer structurally comprises a substrate, a GaN buffer layer, an undoped GaN layer, an n-type GaN layer, a light-emitting layer MQW, a P-type AlGaN layer and a P-type GaN layer sequentially from bottom to top. The light-emitting layer MQW comprises a combination of an InxGa(1-x)N / InyGa(1-y)N quantum well layer and an InmGa(1-m)N / AlnGa(1-n)N quantum well layer, wherein x ranges from 0.15 to 0.25, y ranges from 0.05 to 0.10, m ranges from 0.15 to 0.25 and n ranges from 0.10 to 0.15. The number of electrons overflowing out of a quantum well is decreased, hole injection to the quantum well is improved, concentration of the electrons and holes in the quantum well is improved, device luminous efficiency is improved, and light output is improved by about 8%.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, and relates to an LED epitaxial wafer with a quantum well barrier layer, a growth method and an LED structure. Background technique

[0002] Gallium nitride-based materials, including InGaN, GaN, and AlGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8-6.2eV. They have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. It is an ideal material for the production of short-wavelength high-brightness light-emitting devices, ultraviolet light detectors and high-temperature and high-frequency microelectronic devices. It is widely used in full-color large-screen displays, LCD backlights, signal lights, lighting and other fields. The production of domestic GaN-based LED blue-green light-emitting devices involves the light-emitting layer is composed of multiple quantum well l...

Claims

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