Organic light-emitting device and preparation method thereof
An electroluminescence device and luminescence technology, which are applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of total reflection loss and low light-emitting performance of light-emitting devices, and achieve increased flatness, suitable for Large-scale industrial use and the effect of improving luminous efficiency
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Embodiment 1
[0053] A method for preparing an organic electroluminescent device, comprising the following steps:
[0054] (1) Wash the glass substrate with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface;
[0055] (2) Hole injection layer, hole transport layer, light-emitting layer, electron transport layer and electron injection layer were sequentially prepared on the ITO glass substrate by vacuum evaporation method;
[0056] The evaporation of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer is vacuum evaporation, the evaporation temperature is 400 ° C, and the vacuum degree is 1 × 10 -5 Pa. Wherein, the material of the hole injection layer is V 2 o 5 , the thickness is 35nm; the material of the hole transport layer is TAPC, the thickness is 50nm; the material of the light-emitting layer is BCzVBi, the thickness of the light-emitting la...
Embodiment 2
[0061] A method for preparing an organic electroluminescent device, comprising the following steps:
[0062] (1) Wash the glass substrate with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface;
[0063] (2) Hole injection layer, hole transport layer, light-emitting layer, electron transport layer and electron injection layer were sequentially prepared on the AZO glass substrate by vacuum evaporation method;
[0064] The evaporation of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer is vacuum evaporation, the evaporation temperature is 400 ° C, and the vacuum degree is 1 × 10 -5 Pa. Wherein, the material of the hole injection layer is WO 3 , with a thickness of 80nm; the material of the hole transport layer is TCTA, with a thickness of 60nm; the material of the light-emitting layer is ADN, with a thickness of 5nm; the material o...
Embodiment 3
[0069] A method for preparing an organic electroluminescent device, comprising the following steps:
[0070] (1) Wash the glass substrate with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface;
[0071] (2) Hole injection layer, hole transport layer, light-emitting layer, electron transport layer and electron injection layer were sequentially prepared on the IZO glass substrate by vacuum evaporation method;
[0072] The evaporation of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer is vacuum evaporation, the evaporation temperature is 400 ° C, and the vacuum degree is 1 × 10 -5 Pa. Wherein, the material of the hole injection layer is V 2 o 5 , the thickness is 20nm; the material of the hole transport layer is TCTA, the thickness is 30nm; the material of the light-emitting layer is Alq 3 , with a thickness of 40nm; the materia...
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