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Preparation method of graphene electrode

A graphene electrode, graphene technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of poor adhesion between graphene and the substrate, easy separation and detachment, etc., to optimize the charge transfer characteristics and process. Simple, low production cost effect

Active Publication Date: 2017-01-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of the prior art, the purpose of the present invention is to overcome the deficiencies in the prior art, and provide a method for preparing a graphene electrode, so that the graphene and the substrate are combined by a chemical bond, effectively improving the adhesion between the graphene and the substrate. The problem of poor adhesion and easy separation and falling off improves the adhesion and charge transport characteristics between graphene and the substrate, thereby ensuring the performance of the prepared optoelectronic devices, improving the yield of optoelectronic devices, and reducing production costs.

Method used

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Examples

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Effect test

Embodiment 1

[0016] In the present embodiment, a kind of preparation method of graphene electrode comprises the steps:

[0017] a. Using a GaN epitaxial wafer as the substrate, first place the cleaned GaN epitaxial wafer in a plasma device, then set the power to 50 watts, and the water vapor flow rate to 20 sccm, and treat for 10 minutes to complete the hydrophilicity of the GaN epitaxial wafer deal with;

[0018] b. First prepare a graphene film on a copper substrate, then spin-coat a layer of PMMA on the graphene film of the obtained copper substrate, then dry it at 180 degrees for 1 min, and then place it in an aqueous solution of 1mol / L ferric nitrate for etching Remove the copper substrate, then rinse it with deionized water for 3 times, then use the GaN epitaxial wafer in the above step a to pick it up, and then dry it in a vacuum oven at 70°C for 3 hours, and finally use acetone to fully remove PMMA, and then dry it , that is, the graphene electrode layer is preliminarily prepared...

Embodiment 2

[0022] This embodiment is basically the same as Embodiment 1, especially in that:

[0023] In the present embodiment, the preparation method of graphene electrode comprises the following steps:

[0024] a. Using a silicon wafer as the substrate, first soak the cleaned silicon wafer in chromic acid washing solution, take it out after 24 hours and rinse it repeatedly with deionized water, then immerse the cleaned silicon wafer in the piranha solution and heat at 85°C React for 45 minutes. After completion, rinse with a large amount of deionized water until the surface of the silicon wafer does not contain H+ ions, and dry it with nitrogen to complete the hydrophilic treatment of the silicon wafer;

[0025] b. First, graphene oxide is placed in deionized water, and 60 W power is used for ultrasonication for 3 h to make a graphene oxide dispersion coating slurry, and then the graphene oxide coating slurry is suspended-coated to the mixture obtained in the above step a. On the si...

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Abstract

The invention discloses a preparation method of a graphene electrode. The preparation method of the graphene electrode comprises a step a of conducting hydrophilic treatment of a substrate; a step b of preparing preliminarily a graphene electrode layer on the substrate so that the preliminarily prepared graphene electrode layer and the substrate are combined together through the van der Waals' force; and a step c of conducting acid treatment of the graphene electrode layer to obtain a graphene oxygen-containing group, thus enabling the combination of the graphene electrode layer and the substrate to be enhanced through chemical bonds, and forming a graphene electrode. According to the invention, the graphene and the substrate are combined through the chemical bonds, the problems that the graphene and the substrate are poorly adhered and easily separated from each other are effectively solved, the adhesion and charge transmission properties between the graphene and the substrate are improved, the performance of prepared photoelectric devices is thus ensured, the preparation yield of the photoelectric devices is improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to an electrode preparation method, in particular to a preparation method of a photoelectric device electrode with stability and good conductivity, which is applied in the technical field of photoelectric device preparation. Background technique [0002] Graphene is a monoatomic layer crystal composed of carbon atoms tightly packed, which has many unique properties, such as high specific surface area, good thermal stability, and excellent thermal conductivity. These excellent properties make graphene have good application prospects in the fields of nanoelectronic devices, gas sensors, supercapacitors and energy storage. In particular, graphene has a very high transmittance in the visible light band and good electrical and thermal transmission properties. The theoretical transmittance of single-layer graphene can reach 97.7% at 550nm, making it potential to become an ideal transparent conductive material. . [0003] In recent yea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/02
CPCH01L21/02697H01L21/28
Inventor 杨连乔冯伟王子兴张建华
Owner SHANGHAI UNIV
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