Low-temperature poly-silicon thin film transistor and preparation method thereof

A low-temperature polysilicon, thin film transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as unfavorable applications and reducing the yield of thin-film field-effect transistor arrays

Active Publication Date: 2014-11-19
TRULY HUIZHOU SMART DISPLAY
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  • Description
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  • Application Information

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Problems solved by technology

[0004] The above-mentioned existing technologies not only put forward high requirements on the yellow light process including exposure machine, etching machine

Method used

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  • Low-temperature poly-silicon thin film transistor and preparation method thereof
  • Low-temperature poly-silicon thin film transistor and preparation method thereof
  • Low-temperature poly-silicon thin film transistor and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0065] Correspondingly, this application also provides a method for preparing a low-temperature polysilicon thin film transistor, which includes the following steps:

[0066] 1) Depositing a heat-conducting layer on the substrate, applying a yellowing process to the heat-conducting layer to thin it so that the heat-conducting layer has a number of strip-shaped protrusions;

[0067] 2) Depositing a planarization layer on the thermally conductive layer with a plurality of strip-shaped protrusions;

[0068] 3) Deposit an amorphous silicon layer on the planarization layer, and then perform excimer laser annealing on the amorphous silicon layer to obtain a low-temperature polysilicon film, and then apply a yellow light process to the low-temperature polysilicon film to obtain several The active layer of the active channel; the position of each of the strip-shaped protrusions is outside the side of the corresponding position of each of the active channels, and the two positions are adjacen...

Example Embodiment

[0096] Example 1

[0097] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of the TFT inside the sub-pixel.

[0098] Use sputter to deposit aluminum oxide to deposit thickness on the glass substrate The thermally conductive buffer layer.

[0099] Through the yellow light manufacturing process, the thermally conductive buffer layer is thinned to form a number of strip-shaped protrusions; the thermal conductive layer pattern is as Figure 1 to Figure 3 Shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each strip-shaped protrusion is greater than the width of each corresponding active channel, and the width of each strip-shaped protrusion is 0.5 μm; the thickness of the thermally conductive buffer layer after thinning is

[0100] Deposition of SiO by sol-gel metho...

Example Embodiment

[0106] Example 2

[0107] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of the TFT inside the sub-pixel.

[0108] Use sputter to deposit silicon carbide to deposit thickness on the glass substrate The thermally conductive buffer layer.

[0109] Through the yellow light manufacturing process, the thermally conductive buffer layer is thinned to form a number of strip-shaped protrusions; the thermal conductive layer pattern is as Figure 1 to Figure 3 Shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each strip-shaped protrusion is greater than the width of each corresponding active channel, and the width of each strip-shaped protrusion is 1 μm; the thickness of the thermally conductive buffer layer after thinning is

[0110] The acrylic material monomer is dep...

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Abstract

The invention provides a low-temperature poly-silicon thin film transistor and a preparation method of the low-temperature poly-silicon thin film transistor. The LTPS TFT sequentially comprises a substrate, a heat conducting layer provided with a plurality of strip-shaped protrusions, a planarization layer and an active layer with a plurality of active channels, wherein the active layer is formed by carrying out the yellow laser process on a low-temperature poly-silicon thin film, a gate insulator, a gate electrode, an interlayer insulator, a source electrode and a drain electrode are arranged on the active layer, each strip-shaped protrusion is located outside one side of the position where the corresponding active channel is located, each strip-shaped protrusion and the corresponding active channel are adjacent to each other in position, and the length of each strip-shaped protrusion is larger than the width of the corresponding active channel. According to the low-temperature poly-silicon thin film transistor and the preparation method of the low-temperature poly-silicon thin film transistor, because large poly-silicon crystal grains can be obtained and the active channels of the thin film transistor can be completely located inside one single crystal grain, adverse impact of a poly-silicon crystal grain boundary on carrier mobility is avoided, the leakage current phenomenon caused by the crystal grain boundary is eliminated, and a simplest pixel circuit driving structure can be implemented.

Description

technical field [0001] The present application relates to the technical field of polysilicon thin film transistors, in particular to a low-temperature polysilicon thin film transistor and a preparation method thereof. Background technique [0002] AMOLED (Active Matrix Organic Light Emitting Diode) is an active matrix organic light-emitting diode, which has the advantages of self-illumination, wide color gamut, high contrast, fast response and flexible display. It is considered as TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor-LCD) is an ideal replacement. Existing commercial AMOLED products are mainly used in smartphones, and are driven by LTPS TFT (Low Temperature Poly Silicon Thin Film Transistor, low temperature polysilicon thin film field effect transistor) backplane. Among them, the low-temperature polysilicon technology is a process of forming a polysilicon film on a substrate at a temperature lower than 600°C, which has the a...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336
CPCH01L23/367H01L29/66757H01L29/78675
Inventor 何剑苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY
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