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DAST-graphene composite film and preparation method thereof

A graphene composite and graphene technology, which is applied in the preparation of sulfonates, chemical instruments and methods, carbon compounds, etc., can solve the problem of weak photon response in the terahertz band, high difficulty, and difficulty in meeting the requirements of photodetectors, temperature sensors, and gas sensors. and other device requirements

Inactive Publication Date: 2014-12-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, graphene also has some disadvantages, including: the difficulty of directly integrating the material into microdevices, weak response to photons in the terahertz band, and less sensitivity to some special gases than organic films, etc.
[0007] Therefore, pure DAST or pure graphene have some shortcomings, and it is difficult to meet the requirements of photodetectors, temperature sensors, gas sensors and other devices.

Method used

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  • DAST-graphene composite film and preparation method thereof
  • DAST-graphene composite film and preparation method thereof
  • DAST-graphene composite film and preparation method thereof

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Embodiment Construction

[0036] The guiding ideology of the present invention is to prepare a DAST-graphene composite film with better overall performance by utilizing the excellent electrical, optical and mechanical properties of graphene and DAST in the DAST-graphene composite film structure, which can be used as an infrared or Sensitive materials for terahertz detectors, temperature sensors, gas sensors and other devices to improve the overall performance of devices.

[0037] The present invention prepares the reaction schematic diagram of DAST-graphene composite material as figure 1 shown. Among them, the embodiment of DAST-graphene in-situ composite film prepared by in-situ composite method is as follows: ①Reaction of iodomethane and 4-picoline, after filtration, washing, drying and other steps, 4-methyl-N -picoline iodine salt, spare; ②AgNO 3 and K 2 CO 3React with an aqueous solution of p-toluenesulfonic acid, filter, evaporate, and dry to obtain white silver p-toluenesulfonate powder for s...

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Abstract

The invention discloses a DAST-graphene composite film and a preparation method thereof. The chemical name of DAST is 4-(4-dimethyl amino styryl) methylpyridine p-methyl benzene sulfonate. The composite film comprises two-dimensional DAST and two-dimensional graphene. The preparation method of the DAST-graphene composite film comprises the following steps: forming a composite material by using the DAST and the graphene in an in-situ composite or ex-situ composite manner, and then preparing the composite material into a film so as to form the DAST-graphene composite film. The composite film has a special chemical structure and special electric, optics and mechanical properties, so that the defects of structure and properties of an existing simplex graphene film or simplex DATS film can be avoided; the comprehensive property of the material is improved; the DAST-graphene composite film has application prospects in fields of infrared or terahertz photoelectric detectors, temperature sensors, gas sensors and the like. In addition, the preparation method of the DAST-graphene composite film is simple and free of complex and expensive film forming device, and the DAST-graphene composite film has the advantages of low production cost, high quality and the like.

Description

technical field [0001] The invention belongs to the field of photoelectric sensitive materials, and in particular relates to a DAST-graphene composite film and a preparation method thereof. Background technique [0002] In recent years, organic nonlinear optical materials have received extensive attention, among which 4-(4-dimethylaminostyryl)picoline p-toluenesulfonate (DAST for short) is an important organic nonlinear Optical materials, its second-order nonlinear coefficient at 1542nm is 840pm / V, and its electro-optic coefficient at 820nm is 75p / V, which is 1-2 orders of magnitude higher than the corresponding parameters of ZnTe, which is widely used at present. Due to the low dielectric constant of DAST, it has longer coherence length and faster response characteristics (see Li Yin, Zhang Jianxiu, Fu Peizhen, Wu Yicheng, "Growth, Morphology and Transmission Spectrum of Organic Nonlinear Optical Crystal DAST", artificial Acta Crystallographica, Vol. 40, No. 1, 7-16 (2011)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/04C01B31/04C07D213/38C07C303/32C07C309/30C01B32/194
Inventor 许向东孙自强蒋亚东范凯温粤江黄锐邹蕊矫王蒙姚洁敖天宏何琼
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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