Hemispherical solid-state wave micro-gyroscope and preparation method thereof

A micro-gyroscope, hemisphere technology, used in gyroscope/steering sensing equipment, gyro effect for speed measurement, instruments, etc., can solve the problem of not reaching the megahertz level, crosstalk, and effective vibration mass only distributed on the edge of the shell and other problems, to achieve the effect of large effective vibration mass, reduce environmental noise, and reduce mutual crosstalk

Active Publication Date: 2017-01-25
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] After a literature search of the prior art, it was found that J J Bernstein et al. of Draper Laboratory in the United States introduced a single-ended fixed miniature hemispherical resonator gyroscope in their paper "A MEMS diamond hemispherical resonator". The gyroscope uses a diamond hemispherical shell as a Harmonic oscillator, the effective vibration mass is only distributed on the edge of the shell, and the resonant frequency of the working mode is at the level of hundreds of kilohertz, not at the megahertz level
In addition, the gyroscope has 8 signal electrodes, and the distance between adjacent signal electrodes is relatively close, so there is a certain crosstalk phenomenon

Method used

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  • Hemispherical solid-state wave micro-gyroscope and preparation method thereof
  • Hemispherical solid-state wave micro-gyroscope and preparation method thereof

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Embodiment 1

[0033] Such as figure 2 As shown, the present embodiment provides a hemispherical solid-state wave micro-gyroscope, comprising:

[0034] a single crystal silicon substrate 1;

[0035] Eight evenly distributed signal electrodes 2;

[0036] Eight evenly distributed shielding electrodes 3;

[0037] A miniature hemispherical resonator 4;

[0038] A central fixed support column 5;

[0039] Among them: the miniature hemispherical resonator 4 is connected to the monocrystalline silicon substrate 1 through the central fixed support column 5; the signal electrode 2 and the shielding electrode 3 are arranged on the upper surface of the monocrystalline silicon substrate 1, and the two are interlaced and evenly distributed on the micro hemisphere Around the bulk resonator 4 , the distances between the eight signal electrodes 2 and the miniature hemispherical resonator 4 are the same, and the distances between the eight shielding electrodes 3 and the micro hemispherical resonator 4 ar...

Embodiment 2

[0048] Such asFigure 1(a)-Figure 1(f) As shown, the present embodiment provides a method for preparing a hemispherical solid-state wave micro-gyroscope, comprising the following steps:

[0049] The first step, as shown in Figure 1(a), is to clean the single crystal silicon substrate 1, apply glue, photolithography, development, boron ion implantation, and degelling process, and obtain a thickness of 10 μm on the single crystal silicon substrate 1. Signal electrode 2 and shielding electrode 3 of 50 μm boron ion-doped silicon material;

[0050] The second step, as shown in Figure 1(b), is to carry out glue coating, photolithography, and development processes on the basis of the first step to obtain a patterned photoresist on the surface of the single crystal silicon substrate 1, which is used for etching the hemisphere shaped groove as a mask;

[0051] The third step, as shown in Fig. 1(c), is to carry out the isotropic etching process and deglue process of single crystal silic...

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Abstract

The invention provides a hemispheroid solid fluctuation micro-gyroscope and a manufacturing method of the hemispheroid solid fluctuation micro-gyroscope. The hemispheroid solid fluctuation micro-gyroscope comprises a monocrystalline silicon substrate, eight signal electrodes, eight shielding electrodes, a micro hemispheroid harmonic oscillator and a central fixing supporting column, wherein the micro hemispheroid harmonic oscillator is connected with the monocrystalline silicon substrate through the central fixing supporting column; the signal electrodes and the shielding electrodes are arranged on the upper surface of the monocrystalline silicon substrate and are alternately and uniformly distributed on the periphery of the micro hemispheroid harmonic oscillator; the distance from each signal electrode to the micro hemispheroid harmonic oscillator and the distance from each shielding electrode to the micro hemispheroid harmonic oscillator are equal. The microgyroscope is produced by integrating an MEMS bulk silicon processing technology and a surface silicon processing technology; large effective vibrator mass can be achieved, and the detection effect on a Coriolis effect can be enhanced; high operating mode vibration efficiency can be achieved, and the ambient noise and mechanical noise can be lowered; by adopting the shielding electrode, the crosstalk among the signal electrodes can be alleviated, and the influence of the stray capacitance in the detection process can be alleviated.

Description

technical field [0001] The invention relates to a vibration gyroscope in the field of micro-electromechanical technology, in particular to a hemispherical solid-state wave micro-gyroscope and a preparation method thereof. Background technique [0002] Gyroscope is an inertial device that can detect the angle or angular velocity of the carrier, and it plays a very important role in the fields of attitude control, navigation and positioning. With the development of national defense technology and aviation and aerospace industries, the requirements of inertial navigation systems for gyroscopes are also developing in the direction of low cost, small size, high precision, multi-axis detection, high reliability, and adaptability to various harsh environments. Therefore, the importance of MEMS micro-gyro is self-evident. In particular, the micro-hemispherical resonant gyroscope, as an important research direction of the MEMS micro-gyroscope, has become a research hotspot in this f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01C19/5691B81C1/00
CPCB81C1/00388B81C1/00539B81C1/00595B81C1/00849G01C19/5691
Inventor 张卫平唐健刘亚东汪濙海成宇翔孙殿竣邢亚亮陈文元
Owner SHANGHAI JIAO TONG UNIV
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