A SERS sensor for quantitatively detecting the concentration of mercury ions in water samples and its preparation method
A quantitative detection, mercury ion technology, applied in the field of biological and Raman spectroscopy detection, can solve the problems of low detection accuracy, high post-processing requirements, unsuitable for water sample detection, etc., to achieve rapid detection, convenient detection process, good specificity Effect
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Embodiment 1
[0057] (a) Preparation of silicon nanowire arrays by hydrogen fluoride assisted etching method:
[0058] (1) The silicon wafer is firstly ultrasonically cleaned with deionized water, acetone, and deionized water, and then put into a mixed solution of concentrated sulfuric acid and hydrogen peroxide (concentration: 40wt%) (volume ratio=1:0.01) for further cleaning, Then rinse with deionized water to obtain a clean silicon wafer. (2) Place the cleaned silicon wafer into hydrogen fluoride solution (concentration: 1wt%) for silicon-hydrogenation reaction, shake slowly for 1 minute, and obtain a silicon wafer covered with a large number of silicon-hydrogen bonds (Si-H). (3) Put the silicon wafer obtained after the above treatment into a mixed solution (volume ratio = 1:0.01) of silver nitrate (concentration: 1M) and hydrogen fluoride (concentration: 40wt%), and shake slowly for 1 minute to make the silicon wafer A layer of silver nanoparticles can be uniformly grown in situ on the...
Embodiment 2
[0064] (a) Preparation of silicon nanowire arrays by hydrogen fluoride assisted etching method:
[0065] (1) The silicon wafer is firstly ultrasonically cleaned with deionized water, acetone, and deionized water, and then put into a mixed solution of concentrated sulfuric acid and hydrogen peroxide (concentration: 40wt%) (volume ratio=1:0.1) for further cleaning, Then rinse with deionized water to obtain a clean silicon wafer. (2) Place the cleaned silicon wafer into a hydrogen fluoride solution (concentration: 5wt%) for silicon-hydrogenation reaction, shake slowly for 10 minutes, and obtain a silicon wafer covered with a large number of silicon-hydrogen bonds (Si-H). (3) Put the silicon wafer obtained after the above treatment into a mixed solution (volume ratio = 1:0.1) of silver nitrate (concentration: 1M) and hydrogen fluoride (concentration: 40wt%), and shake slowly for 10 minutes to make the silicon wafer A layer of silver nanoparticles can be uniformly grown in situ on...
Embodiment 3
[0071] (a) Preparation of silicon nanowire arrays by hydrogen fluoride assisted etching method:
[0072] (1) The silicon wafer is firstly ultrasonically cleaned with deionized water, acetone, and deionized water, and then put into a mixed solution of concentrated sulfuric acid and hydrogen peroxide (concentration: 40wt%) (volume ratio=1:1) for further cleaning, Then rinse with deionized water to obtain a clean silicon wafer. (2) Put the cleaned silicon wafer into a hydrogen fluoride solution (concentration: 10wt%) for silicon-hydrogenation reaction, shake slowly for 20 minutes, and obtain a silicon wafer covered with a large number of silicon-hydrogen bonds (Si-H). (3) Put the silicon wafer obtained after the above treatment into a mixed solution (volume ratio = 1:1) of silver nitrate (concentration: 1M) and hydrogen fluoride (concentration: 40wt%), and shake slowly for 20 minutes to make the silicon wafer A layer of silver nanoparticles can be uniformly grown in situ on the ...
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