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A method for preparing boron-doped three-dimensional graphene with supercritical carbon dioxide

A technology of carbon dioxide and graphene, which is applied in the production of bulk chemicals, electrical components, battery electrodes, etc., can solve the problems of affecting performance, structural damage, and inability to obtain graphene in one step, so as to overcome the complexity of the process and the method is simple Effect

Active Publication Date: 2016-04-27
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]1. The synthesis is complex, usually obtain three-dimensional graphene oxide and then reduce it, or first reduce graphene oxide and then obtain three-dimensional graphene
[0007]2. It is impossible to obtain graphene with three-dimensional structure and boron doping in one step
[0008]3. The uniformity of boron doping cannot be guaranteed
[0010] 4. Obtain three-dimensional graphene by freeze-drying, such as the method disclosed in CN103787326A, too low temperature will damage the structure of graphene or graphene oxide and affect its performance

Method used

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  • A method for preparing boron-doped three-dimensional graphene with supercritical carbon dioxide
  • A method for preparing boron-doped three-dimensional graphene with supercritical carbon dioxide
  • A method for preparing boron-doped three-dimensional graphene with supercritical carbon dioxide

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Prepare graphene oxide solution: dissolve graphene oxide powder in tetrahydrofuran and ultrasonically disperse for 2 hours until completely dispersed; the concentration of graphene oxide is 3 mg / mL.

[0036] (2) Transfer 1ml of graphene oxide tetrahydrofuran solution to the autoclave, and add a certain amount of tetrahydrofuran borane reducing agent, the concentration of reducing agent is 0.4mol / L.

[0037] (3) Into the autoclave, the volume fraction is 99.9% high-purity CO 2 , adjust the temperature and pressure so that CO 2 Reach the supercritical state, keep constant temperature and pressure for a certain period of time, and slowly release the pressure; take out the powder, wash with acetone, and then centrifuge and dry to obtain boron-doped three-dimensional graphene. The reaction conditions are: temperature 80°C, pressure 150ATM, reaction time: 15h .

[0038] Structural and Morphological Characterization:

[0039] The obtained boron-doped three-dimensional gra...

Embodiment 2

[0043] (1) Prepare graphene oxide solution: dissolve graphene oxide powder in tetrahydrofuran and ultrasonically disperse for 2 hours until completely dispersed; the concentration of graphene oxide is 5 mg / mL.

[0044] (2) Transfer 1ml of graphene oxide tetrahydrofuran solution to the autoclave, and add a certain amount of tetrahydrofuran borane reducing agent, the concentration of reducing agent is 0.4mol / L.

[0045] (3) Pass into the high-pressure reactor with a volume ratio of 99.9% high-purity CO 2 , adjust the temperature and pressure so that CO 2 After reaching the supercritical state, the pressure will be released slowly after constant temperature and pressure for a certain period of time. The powder was taken out, washed with acetone, washed with water, and then centrifuged and dried to obtain boron-doped three-dimensional graphene. The reaction conditions were: temperature 80°C, pressure 150ATM, and reaction time: 15h.

[0046] The morphology of the three-dimensiona...

Embodiment 3

[0050] (1) Prepare graphene oxide solution: dissolve graphene oxide powder in tetrahydrofuran and ultrasonically disperse for 2 hours until completely dispersed; the concentration of graphene oxide is 10 mg / mL.

[0051] (2) Transfer 1ml of graphene oxide tetrahydrofuran solution to the autoclave, and add a certain amount of tetrahydrofuran borane reducing agent, the concentration of reducing agent is 0.8mol / L.

[0052] (3) Pass into the high-pressure reactor with a volume ratio of 99.9% high-purity CO 2 , adjust the temperature and pressure so that CO 2 After reaching the supercritical state, the pressure will be released slowly after constant temperature and pressure for a certain period of time. The powder was taken out, washed with acetone, washed with water, and then centrifuged and dried to obtain boron-doped three-dimensional graphene. The reaction conditions were: temperature 80°C, pressure 150ATM, and reaction time: 15h.

[0053] The morphology of the three-dimension...

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Abstract

The invention relates to a method and application of supercritical carbon dioxide for preparing boron-doped three-dimensional graphene, belonging to the application field of nanometer materials. It is characterized in that: under the action of supercritical carbon dioxide as a fluid medium, borane compounds are used as reducing agents and boron sources to reduce graphene oxide and obtain boron-doped three-dimensional graphene in one step. The method overcomes the defects of complexity, high energy consumption and potential environmental pollution in the current preparation of three-dimensional graphene and boron-doped graphene.

Description

technical field [0001] The invention relates to a method and application of supercritical carbon dioxide for preparing boron-doped three-dimensional graphene, belonging to the application field of nanometer materials. Background technique [0002] Graphene is a two-dimensional material in which carbon atoms form a hexagonal shape with sp2 hybrid orbitals and is only one carbon atom thick. Basic constituent unit; Compared with other carbon materials, graphene has more excellent electrical conductivity (10 3 ~10 4 SM -1 ), large specific surface area (about 2630m 2 g -1 ), higher Young's modulus (about 1100GPa) and thermal conductivity (about 5000Wm -1 K -1 ); its unique structure and a series of excellent properties make it one of the frontiers of material science research today, and has broad application prospects in the fields of catalysis, electronics, biology and energy storage; but due to the strong interaction between the layers Force and van der Waals force, mak...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04H01G11/24H01M4/96
CPCY02E60/13Y02E60/50Y02P20/54
Inventor 周亚洲程晓农杨娟
Owner JIANGSU UNIV