A process for preparing Alticrnita high-entropy alloy coating on the surface of X80 pipeline steel substrate
A high-entropy alloy and substrate surface technology, applied in metal material coating process, coating, vacuum evaporation plating and other directions, can solve the problem of single preparation method of anti-corrosion high-entropy alloy, and achieve excellent corrosion resistance, resistance to Excellent pitting corrosion performance and the effect of improving comprehensive performance
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Embodiment 1
[0043] (1) Substrate pretreatment
[0044] Process the X80 pipeline steel into discs with a diameter and thickness of 1.5cm and 3mm respectively, and use 280#, 400#, 600#, 800#, 1200#, 1500# water sandpaper to polish the X80 substrate in turn from coarse to fine, until After smoothing, use acetone and absolute ethanol to ultrasonically clean for 15 minutes respectively.
[0045] (2) Bias backsplash cleaning
[0046] Deflate the ultra-vacuum multi-functional magnetron co-sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the above-mentioned processed X80 wafer on the sample stage of the vacuum chamber, first draw a low vacuum with the mechanical pump, and then the molecular pump Pull high vacuum, and then under the condition of -500V voltage, Ar atmosphere, and 1Pa vacuum degree, bias backsplash cleaning for 5min.
[0047] (3) Pre-sputtering
[0048] The targets 1, 2, 3, 4, and 5 of the ultra-vacuum mult...
Embodiment 2
[0056] (1) Substrate pretreatment
[0057] Process the X80 pipeline steel into discs with a diameter and thickness of 1.5cm and 3mm respectively, and use 280#, 400#, 600#, 800#, 1200#, 1500# water sandpaper to polish the X80 substrate in turn from coarse to fine, until After smoothing, use acetone and absolute ethanol to ultrasonically clean for 20 minutes respectively.
[0058] (2) Bias backsplash cleaning
[0059] Deflate the ultra-vacuum multi-functional magnetron co-sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the above-mentioned processed X80 wafer on the sample stage of the vacuum chamber, first draw a low vacuum with the mechanical pump, and then the molecular pump High vacuum, and then under the condition of -400V voltage, Ar atmosphere, and 2Pa vacuum degree, bias backsplash cleaning for 10min.
[0060] (3) Pre-sputtering
[0061] The targets 1, 2, 3, 4, and 5 of the ultra-vacuum multi-fu...
Embodiment 3
[0069] (1) Substrate pretreatment
[0070]Process the X80 pipeline steel into discs with a diameter and thickness of 1.5cm and 3mm respectively, and use 280#, 400#, 600#, 800#, 1200#, 1500# water sandpaper to polish the X80 substrate in turn from coarse to fine, until After smoothing, use acetone and absolute ethanol to ultrasonically clean for 20 minutes respectively.
[0071] (2) Bias backsplash cleaning
[0072] Deflate the ultra-vacuum multi-functional magnetron co-sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the above-mentioned processed X80 wafer on the sample stage of the vacuum chamber, first draw a low vacuum with the mechanical pump, and then the molecular pump Pull high vacuum, and then under the condition of -450V voltage, Ar atmosphere, and 1.5Pa vacuum degree, bias backsplash cleaning for 10min.
[0073] (3) Pre-sputtering
[0074] The targets 1, 2, 3, 4, and 5 of the ultra-vacuum mu...
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