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A method for growing light-emitting diodes

A technology of light-emitting diodes and growth methods, which is applied in the field of preparation of group III nitride materials, can solve problems such as LED carrier injection asymmetry, and achieve the effects of improving luminous efficiency and reducing electron leakage

Active Publication Date: 2018-04-27
华芯半导体科技有限公司
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Problems solved by technology

Since the hole concentration and hole mobility of P-type GaN are very different from the electrons of N-type GaN, the asymmetry of LED carrier injection is caused.

Method used

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  • A method for growing light-emitting diodes

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Embodiment Construction

[0020] A light-emitting diode with a new electron blocking layer structure and its growth method. The LED epitaxial structure includes, from bottom to top, a substrate 1, a low-temperature GaN buffer layer 2, a GaN undoped layer 3, and an N-type GaN layer 4. , multi-quantum well layer 5, N-type or unintentionally doped GaN electron blocking layer 6, high-temperature P-type GaN layer 7, P-type contact layer 8;

[0021] The growth method of its LED epitaxial structure includes the following specific steps:

[0022] Step 1, the substrate 1 is subjected to a high-temperature cleaning treatment for 5-20 minutes in a hydrogen atmosphere at 1000-1200° C., and then a nitriding treatment is performed;

[0023] Step 2, lowering the temperature to 500-650° C., growing a low-temperature GaN buffer layer 2 with a thickness of 20-30 nm, controlling the growth pressure between 300-760 Torr, and controlling the V / III ratio to 50-1000;

[0024] Step 3: After the growth of the low-temperature ...

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Abstract

The invention discloses a light emitting diode with a novel P-type electron barrier layer structure and a growing method. The light emitting diode is of an LED epitaxy structure and sequentially comprises a substrate, a low-temperature GaN buffering layer, a GaN undoped layer, an N-type GaN layer, a multi-quantum-well layer, an N-type or involuntarily-doped GaN electron barrier layer, a high-temperature P-type GaN layer and a P-type contact layer from bottom to top. The growing method includes the steps of carrying out high-temperature cleaning treatment on the substrate, and carrying out nitrogen treatment on the substrate; after the GaN undoped layer is completely grown, growing the N-type GaN layer with the stable doping concentration; after the N-type GaN layer is completely grown, growing the multi-quantum-well layer; after the multi-quantum-well layer is completely grown, growing the barrier layer low-temperature P-type GaN layer; growing the P-type contact layer; after epitaxial growth is completed, enabling the temperature to be the indoor temperature, obtaining the LED epitaxy structure, and then manufacturing single small-size chips with the cleaning technology, the depositing technology, the photoetching technology and the etching technology.

Description

technical field [0001] The invention relates to the technical field of preparation of Group III nitride materials, in particular to a method for growing a light emitting diode with an electron blocking layer structure. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. Group III nitrides represented by gallium nitride are wide-bandgap semiconductor materials with direct bandgap, which have excellent properties such as high electron drift saturation velocity, good thermal conductivity, strong chemical bond, high temperature resistance and corrosion resistance. Its ternary alloy indium gallium nitride (InGaN) band gap is continuously adjustable from 0.7eV indium nitride (InN) to 3.4eV gallium nitride (GaN), and the emission wavelength covers the entire region of visible light an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/12H01L33/32
CPCH01L33/005H01L33/12H01L33/14H01L33/32H01L2933/0008
Inventor 王智勇张杨杨翠柏杨光辉
Owner 华芯半导体科技有限公司