Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production method of solar grade czochralski monocrystalline silicon

A production method and solar-grade technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of lack of reducing black chips and black corners, and reduce void-type defects, reduce black chips and black corners. effect on film phenomenon, black chip and black corner problem reduction

Inactive Publication Date: 2015-02-04
XINGTAI JINGLONG ELECTRONICS MATERIAL
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a lack of a simple, effective and easy method for reducing black chips and black corners

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method of solar grade czochralski monocrystalline silicon
  • Production method of solar grade czochralski monocrystalline silicon
  • Production method of solar grade czochralski monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A method for producing solar-grade Czochralski monocrystalline silicon, comprising the steps of:

[0042] (1) Feeding: Add 120 kg of silicon raw material and 31.49 g of boron into the quartz crucible;

[0043] (2) Melting: Close and vacuumize the single crystal furnace so that the pressure in the single crystal furnace is maintained below 5Pa, and then increase the heating power to 95-100 kW (about 1420 °C) at one time;

[0044] (3) Temperature stabilization: When the silicon raw material is melted into a liquid, the heating power is reduced to 45 kW and the automatic temperature program is put into operation. The automatic temperature program keeps the temperature in the furnace constant for 1 hour;

[0045] (4) Seeding: adjust the position of the crucible so that the distance from the liquid surface of the silicon liquid to the guide tube is 30 mm, set both the crystal rotation and the crucible rotation to 8 turns per minute, and then lower the seed crystal to the liq...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a production method of solar grade czochralski monocrystalline silicon, relating to the technical field of czochralski monocrystalline silicon. The production method comprises the following eight steps: charging, melting, stabilizing temperature, performing seeding, shouldering, performing constant-diameter growth, ending and the like. In a constant-diameter growth process, a phenomenon that the distance between the liquid level of a silicone liquid and a flow guide cylinder is unchanged can be ensured by adopting crucible rise compensation according to the change of the liquid level with the radian of a quartz crucible in a crystal pulling process, and in addition, diameter compensation can be increased according to the variation trend of diameters so as to control the tail diameter deviation within 2mm. The method disclosed by the invention is simple and convenient to operate and easy to implement, crystal defects possibly generated in a crystallization process can be effectively reduced, the problems of black chips and black corner sheets in czochralski monocrystalline silicon can be solved, the quality of monocrystals is improved, the service life of the monocrystals can be significantly improved, return of goods caused by product quality defects can be avoided, and unnecessary waste of money can be saved for enterprises.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon. Background technique [0002] Solar energy is one of the most important green energy sources in the future. As the core part of high-efficiency solar cells, high-quality monocrystalline silicon has always been a key product for research and development. [0003] The production methods of monocrystalline silicon mainly include Czochralski method (CZ), zone melting method (FZ) and epitaxy method, among which the Czochralski method and zone melting method are used to elongate single crystal silicon rods, while the epitaxy method is used to elongate Single crystal silicon thin film. Since monocrystalline silicon produced by the Czochralski method is widely used in key fields such as semiconductor integrated circuits, diodes, epitaxial wafer substrates, and solar cells, it has received special attention. [0004] At present, in the production field of Czochralski single cr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/06C30B15/20
CPCC30B29/06C30B15/20
Inventor 刘彬国何京辉曹祥瑞颜超程志黄瑞强周子江刘钦范晓普
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com