Production method of solar grade czochralski monocrystalline silicon

A production method and solar-grade technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of lack of reducing black chips and black corners, and reduce void-type defects, reduce black chips and black corners. effect on film phenomenon, black chip and black corner problem reduction

Inactive Publication Date: 2015-02-04
XINGTAI JINGLONG ELECTRONICS MATERIAL
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  • Production method of solar grade czochralski monocrystalline silicon
  • Production method of solar grade czochralski monocrystalline silicon
  • Production method of solar grade czochralski monocrystalline silicon

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[0040] Example 1:

[0041] A production method of solar-grade Czochralski monocrystalline silicon includes the following steps:

[0042] (1) Feeding: add 120 kg of silicon raw material and 31.49 g of boron to the quartz crucible;

[0043] (2) Melting: Turn off the single crystal furnace and evacuate, so that the pressure in the single crystal furnace is maintained below 5Pa, and then increase the heating power to 95-100 kilowatts (about 1420°C) at one time;

[0044] (3) Temperature stabilization: When the silicon raw material is melted into a liquid, the heating power is reduced to 45 kilowatts and put into the automatic temperature program. The automatic temperature program keeps the temperature in the furnace constant for 1 hour;

[0045] (4) Seed crystal: adjust the pot position so that the distance from the liquid level of the silicon liquid to the deflector is 30 mm, set the crystal rotation and the rotation of the pot to 8 revolutions per minute, and then lower the seed crystal to...

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Abstract

The invention discloses a production method of solar grade czochralski monocrystalline silicon, relating to the technical field of czochralski monocrystalline silicon. The production method comprises the following eight steps: charging, melting, stabilizing temperature, performing seeding, shouldering, performing constant-diameter growth, ending and the like. In a constant-diameter growth process, a phenomenon that the distance between the liquid level of a silicone liquid and a flow guide cylinder is unchanged can be ensured by adopting crucible rise compensation according to the change of the liquid level with the radian of a quartz crucible in a crystal pulling process, and in addition, diameter compensation can be increased according to the variation trend of diameters so as to control the tail diameter deviation within 2mm. The method disclosed by the invention is simple and convenient to operate and easy to implement, crystal defects possibly generated in a crystallization process can be effectively reduced, the problems of black chips and black corner sheets in czochralski monocrystalline silicon can be solved, the quality of monocrystals is improved, the service life of the monocrystals can be significantly improved, return of goods caused by product quality defects can be avoided, and unnecessary waste of money can be saved for enterprises.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon. Background technique [0002] Solar energy is one of the most important green energy sources in the future. As the core part of high-efficiency solar cells, high-quality monocrystalline silicon has always been a key product for research and development. [0003] The production methods of monocrystalline silicon mainly include Czochralski method (CZ), zone melting method (FZ) and epitaxy method, among which the Czochralski method and zone melting method are used to elongate single crystal silicon rods, while the epitaxy method is used to elongate Single crystal silicon thin film. Since monocrystalline silicon produced by the Czochralski method is widely used in key fields such as semiconductor integrated circuits, diodes, epitaxial wafer substrates, and solar cells, it has received special attention. [0004] At present, in the production field of Czochralski single cr...

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Application Information

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IPC IPC(8): C30B29/06C30B15/20
CPCC30B29/06C30B15/20
Inventor 刘彬国何京辉曹祥瑞颜超程志黄瑞强周子江刘钦范晓普
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL
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