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Method for simply preparing N-type graphene field-effect tube

A technology of field effect tube and graphene, which is applied in the manufacture of hybrid/electric double layer capacitors, etc., can solve the problems of complicated process and ineffective adjustment of graphene band gap, etc., and achieve the effect of convenient operation and low cost

Inactive Publication Date: 2015-02-25
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, the amount of nitrogen doped by these methods generally does not exceed 10 at. %, and the process is complicated, so the effect on adjusting the band gap of graphene is not significant

Method used

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  • Method for simply preparing N-type graphene field-effect tube
  • Method for simply preparing N-type graphene field-effect tube
  • Method for simply preparing N-type graphene field-effect tube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] (1) Mix 8g of flake graphite, 8g of sodium nitrate and 384mL of commercially available concentrated sulfuric acid in an ice bath; then slowly add 48g of potassium permanganate, stir with a magnetic force and heat at 35 degrees Celsius for 2 hours; then add 320mL to Deionized water was stirred for 15 minutes, and then 800 mL deionized water and 40 mL HO were added 2 o 2 Stirring for 10 minutes gave a green suspension.

[0029] (2) Add 0.0001 mol / L dilute nitric acid solution to the green suspension obtained in step (1) for washing, and then centrifuge at a centrifugal speed of 14000 rpm to obtain a precipitate.

[0030] (3) Repeat step (2) 3 times.

[0031] (4) Add deionized water to the suspension obtained in step (3), and centrifuge at 14,000 rpm to obtain a precipitate.

[0032] (5) Repeat step (4) adding deionized water and centrifuging for 10 times to ensure that no other impurities are contained to obtain a graphene oxide solution.

[0033] (6) Drying the graph...

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Abstract

The invention discloses a method for simply preparing an N-type graphene field-effect tube. According to the method, oxidized graphene prepared by virtue of chemical oxidation is used as a raw material, an oxidized graphene sheet is used for forming a film on a substrate by spin coating, and then nitrogen doped graphene is obtained by virtue of illumination. A fluorinated graphene film can be illuminated at a regional position capable of being selected by laser light with the energy of 65-75mJ / cm<2> or a mercury vapor lamp in an atmosphere of NH3 gas of which the flow is 10-30torr, the illumination time is 5-60 minutes, and reduction and doping of nitrogen atoms are realized during illumination. The method disclosed by the invention is convenient to operate, low in cost and capable of realizing mass preparation, and the content of doped nitrogen, the conductivity of graphene and band gaps can be regulated and controlled and an effect of the N-type graphene field-effect tube can be realized by virtue of illumination time and intensity and the concentration of doped fluoride.

Description

technical field [0001] The invention relates to a simple preparation method of a macro-graphene material with controllable structure and performance, in particular to a method for doping nitrogen by simple light irradiation to obtain an N-type field effect tube product based on reduced graphene oxide. Background technique [0002] Graphene has an ideal two-dimensional crystal structure endowing it with many unique physical and chemical properties such as light, electricity, magnetism, and heat, which has attracted extensive attention in the fields of condensed matter physics, chemistry, and material science. However, since graphene is a zero-bandgap semiconductor, and graphene is usually prepared by micromechanical exfoliation, chemical vapor deposition and epitaxial growth methods, the size of graphene obtained by these methods is not easy to control, and uniform large-area graphene cannot be obtained. There are disadvantages such as high cost and low efficiency. However, ...

Claims

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Application Information

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IPC IPC(8): C01B31/04H01G11/86
Inventor 李新宇肖剑荣唐涛李明文剑锋
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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