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Preparation method of sulphur and silver co-doped p type zinc oxide optoelectronic thin film

A photoelectric thin film and co-doping technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of difficult realization of p-type ZnO thin films, hinder shallow acceptor energy levels, limit hole concentration, etc., and achieve Achieve large-scale industrial production, high repeatability, and excellent electrical properties

Active Publication Date: 2015-03-11
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the difficult realization of p-type ZnO thin films has increasingly become a bottleneck restricting the deviceization of ZnO materials.
Because 1) the acceptor energy level of ZnO is very deep, and the presence of donor defects has a strong self-compensation effect, which makes intrinsic ZnO present a weak n-type, which hinders the formation of shallow acceptor energy levels
2) The solid solubility of most acceptor elements in ZnO is very low, which greatly limits the increase of hole concentration
However, there is no further research on how to realize the effective doping of the two elements and effectively control the doping ratio

Method used

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  • Preparation method of sulphur and silver co-doped p type zinc oxide optoelectronic thin film
  • Preparation method of sulphur and silver co-doped p type zinc oxide optoelectronic thin film
  • Preparation method of sulphur and silver co-doped p type zinc oxide optoelectronic thin film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Use the silicon after the surface has been strictly cleaned as the substrate, put it into the sample 1 position, heat the substrate to 300°C, and pump the vacuum degree of the magnetron sputtering chamber to 10 -4 After the order of Pa, control the parameters of the argon flowmeter to 80sccm, (the air pressure is stable at 4.1-4.3Pa), set the RF power of the zinc sulfide target to 80W, and the DC sputtering power of the silver target to 10W, and obtain Ag doping by sputtering A ZnS:Ag film with a ratio of 3.9%.

[0020] (2) The obtained ZnS:Ag thin film was subjected to thermal oxidation treatment in an oxygen atmosphere at a temperature of 800° C. for 6 hours. A p-type ZnO film co-doped with sulfur and zinc with a thickness of about 985 nm was obtained.

[0021] The room temperature electrical properties of the obtained p-type ZnO film co-doped with sulfur and zinc are shown in Table 1, the resistivity is 0.0389Ωcm, and the mobility is 7.85cm 2 / V·s, the carrier...

Embodiment 2

[0025] (1) Put the strictly cleaned quartz as the substrate, put it into the sample 2 position, set the substrate temperature to 250°C; pump the vacuum degree of the magnetron sputtering chamber to 10 -4 After the Pa order of magnitude, control the parameters of the argon gas flowmeter to 50sccm, (the air pressure is stable at 3.-3.3Pa), set the RF power of the zinc sulfide target to 50W, and the DC sputtering power of the silver target to 5W, and the Ag-doped A ZnS:Ag thin film with a dopant ratio of 2.9%.

[0026] (2) The obtained ZnS:Ag thin film was subjected to thermal oxidation treatment in an oxygen atmosphere at a temperature of 1000° C. for 8 hours. A p-type ZnO film co-doped with sulfur and zinc with a thickness of about 818 nm was obtained.

[0027] The room temperature electrical properties of the obtained p-type ZnO film co-doped with sulfur and zinc are shown in Table 1, the resistivity is 0.054Ωcm, and the mobility is 20.78cm 2 / V·s, the carrier concentration...

Embodiment 3

[0030] (1) Put the silicon that has been strictly cleaned on the surface as the substrate, put it into the sample 2 position, and set the substrate temperature to 350°C; pump the vacuum degree of the magnetron sputtering chamber to 10 -4 After the Pa order of magnitude, control the parameters of the argon gas flowmeter to 100sccm, (the air pressure is stable at 4.8.-5.0Pa), set the RF power of the zinc sulfide target to 100W, and the DC sputtering power of the silver target to 20W, and the Ag-doped A ZnS:Ag thin film with a dopant ratio of 7.2%.

[0031] (2) The obtained ZnS:Ag thin film was subjected to thermal oxidation treatment in an oxygen atmosphere at a temperature of 600° C. for 8 hours. A p-type ZnO film co-doped with sulfur and zinc with a thickness of about 1132 nm was obtained.

[0032] The room temperature electrical properties of the obtained p-type ZnO film co-doped with sulfur and zinc are shown in Table 1, the resistivity is 0.054Ωcm, and the mobility is 0.0...

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Abstract

The invention relates to a preparation method of a sulphur and silver co-doped p type zinc oxide optoelectronic thin film. According to the preparation method, magnetron sputtering and thermal oxidation technologies are adopted. The preparation method includes the following steps that: a magnetron sputtering cavity is pumped to form a vacuum environment, and a thoroughly-cleared substrate is heated, and a zinc sulfide target and a silver target of which the purities are larger than 99.99% are provided, and a ZnS:Ag thin film is deposited through adopting a double-target co-sputtering method; and the obtained ZnS:Ag thin film is arranged in an oxygen atmosphere so as to be subjected to thermal oxidation treatment. The preparation method of the invention has the advantages of easiness in parameter control and high repeatability, and is suitable for industrialization production environments. With the preparation method adopted, doping concentration can be controlled.

Description

technical field [0001] The invention belongs to the field of p-type ZnO semiconductor photoelectric thin film materials, and specifically relates to a preparation method and application of sulfur and silver co-doped p-type ZnO photoelectric thin film. Background technique [0002] As a representative material of wide bandgap semiconductor materials, ZnO has a bandgap width as high as 3.37eV and an exciton binding energy as high as 60meV, and ZnO has the characteristics of rich raw materials, green and non-toxic, which makes ZnO widely used in the semiconductor industry, especially in ultraviolet optoelectronics. The field of devices has received extensive attention. However, the difficult realization of p-type ZnO thin films has increasingly become a bottleneck restricting the deviceization of ZnO materials. Because 1) the acceptor energy level of ZnO is very deep, and the presence of donor defects has a strong self-compensation effect, which makes intrinsic ZnO present a w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L21/02
CPCC23C14/0623C23C14/14C23C14/35C23C14/5853H01L31/02963
Inventor 何丹农卢静李争尹桂林葛美英
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH