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Groove gate type right angle compound gate field plate heterojunction device and manufacturing method thereof

A compound gate and heterojunction technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing device yield, cumbersome process debugging, increasing device difficulty, etc., to improve reliability, reduce Electric field, the effect of reducing gate leakage current

Active Publication Date: 2017-03-29
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the process of GaN-based double-layer field plate HEMT devices is complex and the manufacturing cost is higher. The fabrication of each field plate requires process steps such as photolithography, metal deposition, and passivation dielectric deposition.
Moreover, in order to optimize the thickness of the dielectric material under the field plates of each layer to maximize the breakdown voltage, tedious process debugging and optimization must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

Method used

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  • Groove gate type right angle compound gate field plate heterojunction device and manufacturing method thereof
  • Groove gate type right angle compound gate field plate heterojunction device and manufacturing method thereof
  • Groove gate type right angle compound gate field plate heterojunction device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1: The substrate is sapphire, and the passivation layer is Al 2 O 3 , The protective layer is SiN, and the high dielectric constant medium is HfO 2 The in-line gate field plate is a groove gate type right-angle compound gate field plate heterojunction device of Ti / Mo / Au metal combination.

[0044] Step 1. Make the transition layer 2 by epitaxial GaN material from the bottom up on the sapphire substrate 1, such as image 3 a.

[0045] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 using metal organic chemical vapor deposition technology. The transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from the bottom up. The process conditions of the epitaxial lower layer GaN material are: temperature is 530℃, pressure is 45 Torr, hydrogen flow is 4400sccm, ammonia flow is 4400sccm, gallium source flow is 22μmol / min; the process conditions of epitaxial upper GaN material are: temperature ...

Embodiment 2

[0066] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is made of SiO 2 , The protective layer is SiN, and the high dielectric constant medium is Al 2 O 3 The in-line gate field plate is a groove gate type right-angle compound gate field plate heterojunction device of Ti / Ni / Au metal combination.

[0067] Step 1. Bottom-up epitaxial AlN and GaN materials on the silicon carbide substrate 1 to make a transition layer 2, such as image 3 a.

[0068] 1.1) Use metal organic chemical vapor deposition technology to epitaxial undoped AlN material with a thickness of 50nm on silicon carbide substrate 1; the epitaxial process conditions are: temperature is 1000 ℃, pressure is 45 Torr, hydrogen flow is 4600sccm, The ammonia flow rate is 4600sccm, and the aluminum source flow rate is 5μmol / min;

[0069] 1.2) Use metal organic chemical vapor deposition technology to epitaxial GaN material with a thickness of 2.45 μm on AlN material to complete the production of tr...

Embodiment 3

[0103] Embodiment 3: The substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , The high dielectric constant medium is HfO 2 The in-line gate field plate is a groove gate type right-angle compound gate field plate heterojunction device of Ti / Pt / Au metal combination.

[0104] Step A. Bottom-up epitaxial AlN and GaN materials on the silicon substrate 1 to make a transition layer 2, such as image 3 a.

[0105] A1) Using metal-organic chemical vapor deposition technology, under the process conditions of temperature of 800℃, pressure of 40 Torr, hydrogen flow rate of 4000 sccm, ammonia flow rate of 4000 sccm, and aluminum source flow rate of 25 μmol / min, epitaxial on silicon substrate 1 AlN material with a thickness of 200nm;

[0106] A2) Using metal organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a hydrogen flow rate of 4000 sccm, an ammonia flow rate of 4000 sccm, and a gallium source flow rate of 1...

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Abstract

The invention discloses a groove grating type right angle composite grating field plate heterogeneous junction device and a manufacture method thereof. The groove grating type right angle composite grating field plate heterogeneous junction device and the manufacture method thereof mainly solve the problem that processes are complex when an existing field plate technology is used to achieve high breakdown voltage. The groove grating type right angle composite grating field plate heterogeneous junction device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a table board (6), a grating groove (7), a grid electrode (8), a passive layer (9) and a protection layer (13), wherein a groove (10) is engraved in the passive layer (9), the groove (10) is completely filled with high dielectric constant media (11), a cross-line-shaped grating field plate (12) is deposited between the protection layer (13) and the protection layer (13), the edge of one side of the cross-line-shaped grating field plate (12), close to the grid electrode (8), is aligned to the edge of one side of the groove (10), close to the grid electrode (8), the cross-line-shaped grating field plate (12) and the high dielectric constant media (11) form a right angle composite grating field plate, and the cross-line-shaped grating field plate (12) is electrically connected with the grid electrode (8). The groove grating type right angle composite grating field plate heterogeneous junction device has the advantages of being simple in manufacture process, high in breakdown voltage, high in reliability and high in rate of finished products, and can be used as a switch device.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor devices, and particularly relates to a groove-gate right-angle composite gate field plate heterojunction device, which can be used as a basic device of a power electronic system. [0002] technical background [0003] Power semiconductor devices are important components of power electronic systems and effective tools for electrical energy processing. In recent years, as energy and environmental issues have become increasingly prominent, the development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious restriction relationship between high speed, high voltage and low on-resistance. A reasonable and effective improvement of this restriction relationship is the key to improving the overall performance of the device. As the market cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L29/778H01L21/335H01L21/28
CPCH01L29/401H01L29/402H01L29/66462H01L29/778
Inventor 毛维佘伟波张延涛葛安奎杨翠郝跃
Owner XIDIAN UNIV
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