Organic electroluminescent device and preparation method thereof
An electroluminescent device, an organic technology, is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve excellent packaging effects, prolong device life, and improve barrier performance
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Embodiment 1
[0061] A method for preparing an organic electroluminescent device, comprising the following steps:
[0062] (1) Pre-treatment of ITO conductive glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function of the conductive layer surface; the thickness of the ITO glass substrate 1 is 100nm;
[0063] Hole injection layer 2: Evaporate MoO on the ITO conductive glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The mass of NPB accounts for 30% of the mass of NPB, and the evaporation is carried out by high vacuum coating equipment, and the vacuum degree during evaporation is 3×10 -5 Pa, the evaporation rate is A hole injection la...
Embodiment 2
[0082] A method for preparing an organic electroluminescent device, comprising the following steps:
[0083] (1) Same as embodiment 1;
[0084] (2) Prepare an encapsulation layer on the cathode layer to obtain an organic electroluminescent device. The preparation method of the encapsulation layer is as follows:
[0085] Prepare a protective layer on the cathode layer by vacuum evaporation, the material of the protective layer is NPB, and the vacuum degree is 8×10 -5 Pa, the evaporation rate is The thickness is 300nm;
[0086] The inorganic silicon layer is prepared by magnetron sputtering on the protective layer, and the material of the inorganic silicon layer is TaSi 2 , with a thickness of 120nm and a background vacuum of 1×10 -5 Pa;
[0087] A PET film is provided, and an organic silicon layer is prepared on the PET film by first spin coating and then exposed to obtain a PET film provided with an organic silicon layer. The material of the organic silicon layer is poly...
Embodiment 3
[0092] A method for preparing an organic electroluminescent device, comprising the following steps:
[0093] (1) Same as embodiment 1;
[0094] (2) Prepare an encapsulation layer on the cathode layer to obtain an organic electroluminescent device. The preparation method of the encapsulation layer is as follows:
[0095] The method of vacuum evaporation is used to prepare a protective layer on the cathode layer. The material of the protective layer is Alq3, and the vacuum degree is 3×10 -5 Pa, the evaporation rate is The thickness is 250nm;
[0096] The inorganic silicon layer is prepared by magnetron sputtering on the protective layer, and the material of the inorganic silicon layer is HfSi 2 , with a thickness of 150nm and a background vacuum of 2×10 -4 Pa;
[0097] A PET film is provided, and an organic silicon layer is prepared on the PET film by first spin coating and then exposed to obtain a PET film provided with an organic silicon layer. The material of the organi...
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