Unlock instant, AI-driven research and patent intelligence for your innovation.

Bulk-passivated crystalline silicon solar cell and bulk passivating method thereof

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as the limitation of body life and difficult content control, and achieve the effect of reducing the concentration

Active Publication Date: 2015-05-06
TRINASOLAR CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially [O i ], it is difficult to control its content through the process route, which makes the bulk lifetime limit in the boron-doped materials currently used on a large scale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bulk-passivated crystalline silicon solar cell and bulk passivating method thereof
  • Bulk-passivated crystalline silicon solar cell and bulk passivating method thereof
  • Bulk-passivated crystalline silicon solar cell and bulk passivating method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. Note that the aspects described below in conjunction with the drawings and specific embodiments are only exemplary, and should not be construed as limiting the protection scope of the present invention.

[0036] figure 1 is a schematic structural view of a conventional crystalline silicon solar cell 100 . like figure 1 As shown, the solar cell 100 may include a semiconductor structure 120 and a passivation layer 110 on its front side and a passivation layer 130 on its back side. The semiconductor structure 120 may specifically include a p-type semiconductor layer 122 and an n-type semiconductor layer 121, the p-semiconductor layer 122 is a boron-doped region doped with boron, and the n-type semiconductor layer 121 is a phosphorus-doped region formed by phosphorus doping . The semiconductor structure 120 is the core component of the solar ce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a bulk passivating method for a crystalline silicon solar cell. The crystalline silicon solar cell comprises a semiconductor structure, and passivating layers which are respectively positioned on the front surface and the rear surface of the semiconductor structure; the semiconductor structure comprises a boron-doped area. The method comprises the steps of providing hydrogen to the boron-doped area; performing photo-injection to the crystalline silicon solar cell at the first temperature until reaching the first preset time quantum; performing photo-injection to the crystalline silicon solar cell at second temperature until reaching the second preset time quantum, wherein the second temperature is less than the first temperature.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a bulk passivated crystalline silicon solar cell and a bulk passivation method thereof. Background technique [0002] At present, silicon materials used in crystalline silicon solar cells are mostly formed by melting and casting ingots in quartz crucibles, and single crystal silicon rods are generally pulled by Czochralski method using seed crystals. Oxygen in the air and oxygen and impurities in the crucible will inevitably enter the crystal lattice of silicon during the high temperature process during the preparation process. Most of these impurities exist in pairs, forming impurity recombination centers inside the semiconductor. The capture cross-section and density of these recombination centers determine the recombination current density and the effective lifetime of the remaining carriers in the crystalline silicon cell, which restricts the conversion efficiency of the crystalli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/0352H01L31/18Y02P70/50
Inventor 陈奕峰崔艳峰王子港丁志强顾卫龙张荣冯志强皮尔·雅各·威灵顿
Owner TRINASOLAR CO LTD