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High-sensitivity gas sensor device, preparation method and toxic gas monitoring system

A gas sensor and high-sensitivity technology, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of low sensitivity of gas sensors, single toxic gas, and inability to integrate chips, etc., and achieves simple and easy preparation methods, small devices, The effect of increasing the function

Active Publication Date: 2016-07-06
苏州慧闻纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is how to overcome the low sensitivity and poor stability of the gas sensor in the existing toxic gas monitoring system, which cannot be integrated into a smaller chip, and the toxic gas detected by the monitoring system is single and cannot be carried around. , Defects that cannot be monitored in real time

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  • High-sensitivity gas sensor device, preparation method and toxic gas monitoring system
  • High-sensitivity gas sensor device, preparation method and toxic gas monitoring system
  • High-sensitivity gas sensor device, preparation method and toxic gas monitoring system

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Embodiment 1

[0044] An embodiment of the present invention provides a method for preparing a high-sensitivity gas sensor device, comprising the following steps:

[0045] S1. Clean the silicon substrate containing the dielectric layer, put the silicon substrate into a solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:1, and treat it in a water bath at 70°C for 30 minutes to make the surface have a hydrophilic group group;

[0046] S2. Self-assembling polystyrene (PS, Polystyrene) microsphere templates with a diameter of 200 nm on the silicon substrate to form a single-layer array template;

[0047] S3. Depositing a cobalt-doped zinc oxide film on the single-layer array template by magnetron sputtering;

[0048] S4. Using toluene to remove the single-layer array template on the silicon substrate, and annealing at 300° C. for 1 h, so that the cobalt-doped zinc oxide film covers the silicon substrate and forms a highly sensitive single-layer porous structur...

Embodiment 2

[0065] An embodiment of the present invention provides a method for preparing a high-sensitivity gas sensor device, comprising the following steps:

[0066] S1. Clean the silicon substrate containing the dielectric layer, put the silicon substrate into a solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:2, and treat it in a water bath at 80°C for 60 minutes to make the surface have a hydrophilic group group;

[0067] S2. Self-assembling polymethylmethacrylate (PMMA, polymethylmethacrylate) microsphere templates with a diameter of 2 μm on the silicon substrate to form a single-layer array template;

[0068] S3. Depositing a zinc-doped indium oxide film on the single-layer array template by means of electron beam evaporation;

[0069] S4. Using toluene to remove the single-layer array template on the silicon substrate, annealing at 500° C. for 3 hours, so that the zinc-doped indium oxide film covers the silicon substrate and forms a highly se...

Embodiment 3

[0086] An embodiment of the present invention provides a method for preparing a high-sensitivity gas sensor device, comprising the following steps:

[0087] S1. Clean the silicon substrate containing the dielectric layer, put the silicon substrate into a solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:3, and treat it in a water bath at 90°C for 40 minutes to make the surface with a hydrophilic group group;

[0088] S2. Self-assembling a PMMA microsphere template with a diameter of 1 μm on the silicon substrate to form a single-layer array template;

[0089] S3. Depositing a zinc-doped indium oxide film on the single-layer array template by magnetron sputtering, and depositing iron-doped tin oxide on the surface of the zinc-doped indium oxide film by magnetron sputtering again film;

[0090] S4. Use toluene to remove the single-layer array template on the silicon substrate, and anneal at 800° C. for 5 hours, so that the zinc-doped indium ...

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Abstract

The invention provides a method for preparing a high-sensitivity gas sensor device. The method comprises the following steps: S1, cleaning a silicon substrate containing a dielectric layer, and processing the surface; S2, self-assembling a polymer microsphere template on the silicon substrate to form a single-layer array template; S3, depositing a doped metal oxide film on the single-layer array template; S4, removing the single-layer array template on the silicon substrate, and performing annealing treatment to form a high-sensitivity porous film; S5, building a metal electrode array on the porous film to form a metal oxide porous film sensor array; S6, integrating the sensor array onto a circuit board so as to prepare and obtain the gas sensor device. The invention also provides a high-sensitivity gas sensor device and a toxic gas monitoring system based on the gas sensor device. The gas sensor device is high in sensitivity, the gas sensor preparation method is simple and feasible, and devices in the monitoring system are relatively small, so that the monitoring system is convenient to carry.

Description

technical field [0001] The invention relates to the field of environmental monitoring, in particular to a preparation method of a high-sensitivity gas sensor, a gas sensor and a toxic gas monitoring system. Background technique [0002] In recent years, major media have frequently reported sudden toxic gas leakage incidents, and people are paying more and more attention to the detection of toxic gas leakage. Toxic gases such as carbon monoxide, hydrogen sulfide, carbon dioxide, sulfur dioxide, etc. cause great harm to the human body. However, due to the long test time of the traditional toxic gas detection method, the test equipment needs to be operated by professionals, the operation is complicated, and it is not easy to use on site. Less than effective promotion. In general, it is non-professionals who need to use toxic gas detection devices. In order to quickly detect toxic gases in a large area, this requires that toxic gas detection devices must have fast response, sim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00
Inventor 孙旭辉张书敏
Owner 苏州慧闻纳米科技有限公司