Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste

A technology of thermal interface materials and bimodal distribution, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve problems such as device failure, and achieve uniform size, high thermal conductivity, and stable and reliable process conditions.

Active Publication Date: 2015-06-03
深圳市先进连接科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under the conditions of high temperature and

Method used

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  • Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste
  • Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste
  • Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1 Preparation of a bimodal distribution nano-silver paste used as a thermal interface material

[0037] Mix small-size nano-silver particles (average particle size 9nm), large-size nano-silver particles (average particle size 52nm) and ultrapure water at a mass ratio of 7:3:50, mechanically stir for 50 minutes, and ultrasonically disperse in ice water 40min, and then centrifuged at a speed of 4000rpm for 15min again to remove the upper layer solution to obtain the bimodal distribution nano-silver paste precipitated at the bottom.

[0038] The SEM picture of the bimodal distribution nano-silver paste prepared by mixing is as follows figure 1 shown.

[0039] Apply bimodal distribution nano-silver paste on the surface of the interconnection between SiC chip and Cu substrate to form a sandwich structure of SiC chip / bimodal distribution nano-silver paste / Cu substrate, and place it on a heating plate at a temperature of 200°C for 20 minutes to form a sintered joint ...

Embodiment 2

[0040] Example 2 Preparation of a bimodal distribution nano-silver paste used as a thermal interface material

[0041] Mix small-size nano-silver particles (average particle size 21nm), large-size nano-silver particles (average particle size 117nm) and ultrapure water at a mass ratio of 2:1:12, mechanically stir for 30 minutes, and ultrasonically disperse in ice water 40min, and then centrifuged at a speed of 3000rpm for 10min again to remove the upper layer solution to obtain the bimodal distribution nano-silver paste precipitated at the bottom.

[0042] The laser particle size analyzer scanning image of the prepared uniformly mixed bimodal distribution nano-silver paste is as follows: figure 2 shown.

[0043] Apply bimodal distribution nano-silver paste on the surface of the interconnection between SiC chip and Cu substrate to form a sandwich structure of SiC chip / bimodal distribution nano-silver paste / Cu substrate, and place it on a heating plate at a temperature of 150°C...

Embodiment 3

[0044] Example 3 Preparation of a bimodal distribution nano-silver paste used as a thermal interface material

[0045] Mix small-size nano-silver particles (average particle size 15nm), large-size nano-silver particles (average particle size 81nm) and ultrapure water at a mass ratio of 3:2:30, mechanically stir for 30 minutes, and ultrasonically disperse in ice water 30min, and then centrifuged at a speed of 3000rpm for 20min again to remove the upper layer solution to obtain the bimodal distribution nano-silver paste precipitated at the bottom.

[0046] Apply bimodal distribution nano-silver paste on the surface of the interconnection between SiC chip and Cu substrate to form a sandwich structure of SiC chip / bimodal distribution nano-silver paste / Cu substrate, and place it on a heating plate at a temperature of 200°C for 30 minutes to form a sintered joint .

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Abstract

The invention provides bimodal distribution nano-silver paste serving as a thermal interface material and a preparation method of the bimodal distribution nano-silver paste. The preparation method comprises the following steps of mixing small-grain-diameter nano-silver particles with grain diameters of 5-20 nanometers, large-grain-diameter nano-silver particles with grain diameters of 30-150 nanometers and ultra-pure water according to a certain mass proportion of 4:1-1:1; mechanically stirring the mixture; ultrasonically dispersing the mixture and centrifuging the mixture; and removing an upper layer of solution so as to obtain the bimodal distribution nano-silver paste. The invention also provides a preparation method for the small-grain-diameter nano-silver particles with the grain diameters of 5-20 nanometers and the large-grain-diameter nano-silver particles with the grain diameters of 30-150 nanometers. Compared with unimodal distribution nano-silver paste and tin-lead solder, the bimodal distribution nano-silver paste which is prepared by the method has high heat conduction performance and high sintering structural stability. The preparation method is simple, preparation technological conditions are stable and reliable, the environment cannot be polluted, and the bimodal distribution nano-silver paste can be used industrially.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging and interconnection, and relates to a bimodal distribution nano-silver paste used as a thermal interface material and a preparation method thereof. Background technique [0002] The third-generation semiconductor materials represented by SiC and GaN have unique properties such as large band gap, high breakdown voltage, high thermal conductivity, small dielectric constant, and good chemical stability, making them suitable for use in optoelectronic devices, high frequency High-power, high-temperature electronic devices are favored. Studies have shown that the new SiC semiconductor device still has good switching characteristics and workability at a high temperature of 350 °C, but its application also poses a major challenge to the packaging material of the device. Traditional thermal interface materials such as solder and thermally conductive adhesives cannot meet the requirements of h...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/24H01L21/60H01L23/373
Inventor 李明雨张志昊肖勇
Owner 深圳市先进连接科技有限公司
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