Manufacturing method of metal grating on silicon-based heterojunction cell

A technology of heterojunction batteries and metal grid lines, which is applied in metal material coating technology, circuits, electrical components, etc., can solve problems such as weak welding ability, high cost, and difficult process, and achieve increased adhesion and easy The effect of welding
CN104701410AInactive Publication Date: 2015-06-10GOLD STONE (FUJIAN) ENERGY CO LTD
3 Cites 11 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
GOLD STONE (FUJIAN) ENERGY CO LTD
Publication Date
2015-06-10
Estimated Expiration
Not applicable ยท inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a manufacturing method of metal grating on a silicon-based heterojunction cell. The manufacturing method includes: providing an N-type silicon chip, depositing a P-type amorphous silicon film layer on one face of the N-type silicon chip, and depositing an N-type amorphous silicon film layer on the other face of the N-type silicon chip; depositing conductive oxide layers on the P-type amorphous silicon film layer and the N-type amorphous silicon film layer, respectively; depositing a barrier layer on each conductive oxide layer; depositing a seed layer on each barrier layer; covering each seed layer with a photoresist layer, performing exposing through a mask, and forming a pattern of the metal grating after developing; electroplating electroplated layers on the seed layers of the pattern of the metal grating; etching off the parts, uncovered with the electroplated layers, of the photoresist layers, the seed layers and the barrier layers, thus forming a metal lamination; coating the surface of the metal lamination with a protective layer. The manufacturing method has the advantages that the cost is low, the process is simple and welding is easy.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of solar cell preparation, in particular to a method for manufacturing a metal grid line on a silicon-based heterojunction solar cell. Background technique

[0002] The structure of silicon-based heterojunction cells, such as figure 1 As shown, the substrate of silicon-based heterojunction cells is generally N-type monocrystalline silicon wafers, and the surface forms a P-N junction with an amorphous silicon film deposited by PECVD as the emitter. The formation of the P-N junction is at Between two different materials, one is single crystal silicon with a bandwidth of about 1.12eV, and the other is an amorphous silicon film with a bandwidth of about 1.72eV. Due to the difference in bandwidth, the junction formed at the interface of two materials is called a heterojunction. For heterojunction solar cells, due to the large difference in the bandwidth of the two junction materials, the open circuit voltage of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More