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Diffusion welding method for W-Ti alloy target assembly

A diffusion welding and alloy target technology, which is applied in the field of microelectronics, can solve the problems of increasing process steps, bag leakage, and inability to weld, etc., and achieve the effect of small machining amount, high welding rate and large contact area

Inactive Publication Date: 2015-06-17
GRIKIN ADVANCED MATERIALS
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Problems solved by technology

However, the hot isostatic pressing diffusion welding process has very high requirements on the production technology of the sheath, and there is a risk of air leakage in the sheath leading to the failure of welding, and the composite after hot isostatic pressing usually has different degrees of bending deformation, which needs to be rectified Flat, increased process links

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  • Diffusion welding method for W-Ti alloy target assembly
  • Diffusion welding method for W-Ti alloy target assembly
  • Diffusion welding method for W-Ti alloy target assembly

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Embodiment 1～4

[0026] according to figure 1 Shown process flow chart, its steps are as follows:

[0027] 1. Preparation of powder and slab to be welded

[0028] According to the design in this embodiment, the target powder raw material to be hot-pressed and the corresponding slab material to be welded are prepared.

[0029] The W-Ti alloy powder is: the mass content of Ti is 5-20%, especially the mass content of Ti is 10%, and the balance is W. The average particle size of W powder is 2-10 μm, and the average particle size of Ti powder is 20-200 μm. The diameter of the forming target is Φ50~500mm, and the thickness is 3~15mm. The thickness of the backplane depends on the requirements of the model specification, and the thickness of the transition layer is 0.5-5mm. Sand blasting or machining can be performed on the welding surface of the slab in advance to improve the roughness of the welding surface and increase the welding strength.

[0030] 2. Molding

[0031] Put the target powder r...

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Abstract

A method for diffusion welding a W-Ti alloy target material assembly for film coating, the method comprising: placing powdered raw material of W-Ti alloy target material and corresponding plate blank material to be welded and composited into a hot press mold and then into a hot press sintering furnace; synchronously conducting hot press sintering molding on the target blank and conducting diffusion welding on the target blank and plate blank to obtain a welded composite W-Ti alloy target material assembly; or utilizing the plate blank as a back plate or a transition layer to obtain the W-Ti alloy target material assembly or a composite three-layer structure of W-Ti alloy target material / transition layer / back plate. The method realizes synchronization between target blank hot press sintering molding and hot press diffusion welding of target blank and plate blank, with a welding tensile strength of greater than 50 MPa.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for diffusion welding of W-Ti alloy target components for coating. Background technique [0002] W-Ti alloy has low electron mobility, stable thermomechanical properties, good oxidation resistance and corrosion resistance, and is often used in the field of microelectronics, such as semiconductor devices, semiconductor packaging, Schottky diodes, Al, Cu, Ag wiring, etc. At present, the manufacturing method of W-Ti alloy film mainly adopts magnetron sputtering W-Ti alloy target. Due to the high melting point of W-Ti alloy, it is usually formed by powder metallurgy process, such as pressureless sintering, hot pressing sintering, hot isostatic pressing sintering, etc. After sintering, the target blank is machined into a single target material, or combined with the back The plates are welded into a composite target. For the composite target, on the one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/00B23K20/24C23C14/34B22F7/00
CPCB23K20/021B23K20/023B22F7/04B23K20/233B23K20/24C23C14/3414
Inventor 丁照崇张玉利刘书芹罗俊峰尚再艳何金江吕保国
Owner GRIKIN ADVANCED MATERIALS
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