Radio frequency integrated circuit chip and method of forming the same

Abstract

A radio frequency integrated circuit chip and its forming method, the radio frequency integrated circuit chip includes: a semiconductor-on-insulator structure, which includes a base, a buried oxide layer and a semiconductor substrate, the semiconductor substrate has a shallow trench isolation structure; filling layer, which penetrates the shallow trench isolation structure and the buried oxide layer, and fills part of the substrate to separate the substrate from the shallow trench isolation structure and the buried oxide layer; a dielectric layer, located in the The semiconductor substrate, the shallow trench isolation structure and the filling layer; the radio frequency device is located on the dielectric layer. Since the base and the buried oxide layer are separated by the filling layer, no charge inversion layer or charge accumulation layer is formed between the base and the shallow trench isolation structure or the buried oxide layer, thereby preventing the base from appearing like a channel-like conductive layer , so there will be no coupling capacitance between the RF device and the substrate, and no harmonic distortion will occur when the RF signal passes through the device, improving the transmission quality of the RF signal.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a radio frequency integrated circuit chip and a forming method thereof. Background technique [0002] Radio Frequency Integrated Circuit (RFIC), strictly speaking, refers to analog circuits that work in the frequency band above 0.8GHz, including microwave and millimeter wave circuits. [0003] Radio frequency integrated circuits mainly include filters, low noise amplifiers (LNA), voltage controlled oscillators (VCO), mixers, amplifiers / drivers, frequency synthesizers, power amplifiers (PA) and power management circuits. These radio frequency integrated circuits can be used to form a radio frequency transceiver, in which LNA, VCO, mixer, driver, etc. can be used to form the receiving front end of the signal receiving chain, that is, the receiver system; and the frequency synthesizer and power amplifier are used to form the transmitter. . The application of radio freque...

AI Technical Summary

Problems solved by technology

[0004] For radio frequency integrated circuit chips (Chips) fabricated on Semiconductor-On-Insulator (SOI), when radio frequency signals pass through active devices and passive devices (such as transmission lines or inductors, etc.) in radio frequency integrated circuits , the RF signal will be coupled with the silicon-on-insulator substrate, resulting in harmonic distortion (Harmonic Distortion), which will have a great adverse effect on the linearity of the signal

[0005] To this end, a new radio frequency integrated circuit chip and its formation method are needed to prevent harmonic distortion caused by coupling between radio frequency signals and silicon-on-insulator substrates

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