Temporary bonding adhesive for wafer thinning, its preparation method, bonding and debonding method

A technology for temporarily bonding glue and wafers, which is applied in the bonding method of adhesive heating, aldehyde/ketone condensation polymer adhesives, adhesives, etc., and can solve the problem of low thermal stability of the adhesive layer and the Solve problems such as low debonding efficiency and poor corrosion resistance, achieve high thermal stability, improve debonding efficiency, and strong corrosion resistance

Active Publication Date: 2017-05-24
深圳市化讯半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above-mentioned prior art, the debonding efficiency of the adhesive layer formed by temporary bonding glue is low, and expensive supporting equipment is required for debonding. In addition, the thermal stability of the adhesive layer is low and the corrosion resistance is poor.

Method used

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  • Temporary bonding adhesive for wafer thinning, its preparation method, bonding and debonding method
  • Temporary bonding adhesive for wafer thinning, its preparation method, bonding and debonding method
  • Temporary bonding adhesive for wafer thinning, its preparation method, bonding and debonding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Add 4.4g of acetaldehyde (99% solution), 4g of 4,4-diamine diphenyl ether, and 28g of DMAc into a thermal dissolution vessel equipped with a stirring device and a water bath heating system. Control the temperature of the water bath at 60-70°C and start the mixer, adjust the speed to 100-1000rpm, stir for 15 minutes and take out the above-mentioned raw materials after they are fully stirred evenly, add 20mg of FC-4430 leveling agent, 4g of polymethyl methacrylate, Stir well. Put it in a vacuum degasser for vacuum degassing, and finally seal it for storage.

Embodiment 2

[0035] In this example, the raw materials specifically include: 3g of paraformaldehyde, 4g of 4,4-diamine diphenyl ether, and 28g of solvent NMP, which are added to a thermal dissolution vessel equipped with a stirring device and a water bath heating system. The temperature of the water bath is controlled at 60-70°C and the stirrer is started, the rotating speed is adjusted to 100-1000rpm, and stirred for 15min. After cooling, it was filtered to obtain a viscous filtrate. Add 17mg 4430 leveling agent to the filtrate and stir evenly. Put it in a vacuum degasser for vacuum degassing, and finally seal it for storage.

Embodiment 3

[0037] In this example, the raw materials specifically include: 4.4g acetaldehyde (99% solution), 3.96g 4,4-diaminediphenylmethane, 28g NMP, 20mg FC-4430 type leveling agent, 4g polymethyl methacrylate; Except that, others are the same as in Example 1.

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Abstract

Disclosed are a temporary bonding glue for wafer backgrinding, a preparation method of the temporary bonding glue and bonding and de-bonding methods. The temporary bonding glue comprises a base resin for producing an adhesive effect, wherein the base resin can be depolymerised into a low molecular compound and / or a linear low polymer under the action of a strong acid, so that an adhesive layer formed by the bonding glue has an obvious depolymerisation reaction under the sufficient impregnation of an acid liquor, that is, the structure of a three-dimensional polymer is damaged, the adhesive layer loses efficacy by means of the generated low molecular compound or the linear low polymer, and the de-bonding efficiency is improved. In addition, the decomposition temperature of the high polymer is not less than 270°C, so that the thermal stability of the adhesive layer is high. In addition, the corrosion resistance of the bonding glue of the present invention is good, and the preparation cost is relatively economical.

Description

technical field [0001] The invention relates to the technical field of adhesives, in particular to temporary bonding adhesives for wafer thinning, a preparation method, bonding and debonding methods thereof. Background technique [0002] In recent years, computers, communications, automotive electronics and other consumer products have put forward higher requirements for microelectronic packaging, that is, smaller, thinner, multi-functional and low-cost. To meet the miniaturization demands of these products, the semiconductor industry needs to thin wafers below 100 μm. Ultra-thin wafers have the characteristics of flexibility and fragility, and are easy to warp and undulate. Therefore, the device wafer is usually bonded to a thicker carrier with a temporary bonding material, and the back is thinned to form a rewiring layer. After the internal interconnection is made, external energy (light, electricity, heat and external force) is input to make the bonding layer invalid, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09J161/22C09J5/06C08G12/08
CPCC08G12/08C09J5/06C09J161/22
Inventor 孙蓉方浩明张国平邓立波
Owner 深圳市化讯半导体材料有限公司
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