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High light transmittance flexible polyimide substrate ito conductive film and its preparation method and application

A technology of polyimide film and polyimide, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., can solve the problems of process parameter specification and low heat resistance, and achieve excellent optical performance , excellent electrical conductivity, and the effect of improving crystal quality

Active Publication Date: 2016-11-09
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the heat resistance of this semi-aromatic PI film is lower than that of the traditional PI film, and the glass transition temperature is only 250-265°C. The inventors used the magnetron sputtering method at room temperature to prepare the ITO layer, and did not specify the specific process parameters. detail

Method used

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  • High light transmittance flexible polyimide substrate ito conductive film and its preparation method and application
  • High light transmittance flexible polyimide substrate ito conductive film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Put the fluorine-containing semi-aromatic PI film (the average light transmittance in the visible light region is 95.7%, and the glass transition temperature is 280 ° C) on the sample stage of the sputtering chamber of the radio frequency magnetron sputtering device, and pump the sputtering chamber Vacuum; after the sample stage is heated to 180°C, turn on the RF power supply, adjust the sputtering power to 50W, and feed high-purity argon to the first working pressure of 0.3Pa, then deposit the first ITO conductive layer on the PI film substrate to 40nm Then, according to the set oxygen-argon ratio of 1%, feed high-purity argon and oxygen to the second working pressure of 0.3Pa, and deposit the second ITO conductive layer on the first ITO conductive layer with a thickness of 140nm; turn off the radio frequency power supply and stop Sputtering, keep the vacuum environment to cool down and take out the conductive film; under vacuum atmosphere, the prepared conductive film ...

Embodiment 2

[0030] Put the fluorine-containing semi-aromatic PI film (the average light transmittance in the visible region is 96.4%, and the glass transition temperature is 323 °C) on the sample stage of the sputtering chamber of the radio frequency magnetron sputtering device, and pump the sputtering chamber Vacuum; after raising the temperature of the sample stage to 220°C, turn on the RF power supply, adjust the sputtering power to 70W, inject high-purity argon gas to the first working pressure of 0.4Pa, and deposit the first ITO conductive layer on the PI film substrate to 40nm Then, according to the set oxygen-argon ratio of 2%, feed high-purity argon and oxygen to the second working pressure of 0.8Pa, and deposit the second ITO conductive layer on the first ITO conductive layer with a thickness of 140nm; turn off the radio frequency power supply and stop Sputtering, keep the vacuum environment to cool down and take out the conductive film; in the vacuum atmosphere, the prepared cond...

Embodiment 3

[0032] Put the fluorine-containing semi-aromatic PI film (the average light transmittance in the visible light region is 98.2%, and the glass transition temperature is 337 ° C) on the sample stage of the sputtering chamber of the radio frequency magnetron sputtering device, and pump the sputtering chamber Vacuum; after raising the temperature of the sample stage to 220°C, turn on the RF power supply, adjust the sputtering power to 90W, pass high-purity argon gas to the first working pressure of 0.3Pa, and deposit the first ITO conductive layer on the PI film substrate to 40nm Then, according to the set oxygen-argon ratio of 4%, pass high-purity argon and oxygen to the second working pressure of 0.5Pa, and deposit the second ITO conductive layer on the first ITO conductive layer with a thickness of 160nm; turn off the radio frequency power supply and stop Sputtering, keeping the vacuum environment to lower the temperature and then taking out the conductive film; the prepared con...

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Abstract

The invention discloses a high-transmittance flexible polyimide substrate ITO conductive film, a preparation method thereof and applications. According to the conductive film, the radio frequency magnetron sputtering technology is used, the flexible PI substrate with both high transparent and high heat-resisting features serves as the substrate, and an ITO conductive layer is deposited by adopting a high-temperature two-step layer to prepare the conductive film. The conductive film has features of low resistance and high transparency, the resistance is lower than 6.4*4<-4> omega.cm, the average transmittance of a visible light region is higher than 80%, and a yellowness index is smaller than 9, and has important application values in manufacturing of a flexible solar cell, a flexible display, an E-book, an electronic label, a photosensor and other photoelectric devices.

Description

technical field [0001] The invention relates to a preparation method and application of a flexible polyimide base ITO conductive film with high light transmittance. Background technique [0002] Indium tin oxide (ITO) conductive thin film has been used in liquid crystal display (LCD), organic electroluminescent display (OLED), It is widely used as transparent electrodes in optoelectronic devices such as e-books, solar cells, and photoelectric sensors. The traditional ITO conductive film is prepared by depositing the ITO conductive layer by high-temperature magnetron sputtering on the base of hard glass. Due to the hard and brittle nature of the glass itself, it is difficult to bend freely, and there are processing and Difficulty in handling, thus unable to meet the requirements of the rapid development of photoelectric display technology and solar cell technology in the direction of large-scale and flexible in recent years. In recent years, research on the preparation of I...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14C23C14/35C23C14/08C23C14/58
Inventor 范琳温钰杨士勇
Owner INST OF CHEM CHINESE ACAD OF SCI
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