Supergravity-assisted and controllable preparation of one-dimensional silicon nanowire arrays
A technology of silicon nanowire arrays and silicon wafers, which is applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficulties in bubble escape, affecting etching uniformity, and uneven array structure, and achieve shortening The effect of reaction time
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Embodiment 1
[0043] (1) Weigh 391mg of silver nitrate solid particles and put them into a plastic bottle wrapped in aluminum foil in advance, add 14ml of hydrofluoric acid and then add 76ml of water to prepare an etching solution;
[0044] (2) Put the cleaned monocrystalline silicon chip into the test tube, adjust the position of the silicon chip so that the centrifugal force direction is perpendicular to the polished surface of the silicon chip, put the test tube into the centrifuge, and add etching solution; set the parameters (0rpm, 300rpm, 500rpm), the etching time is 20min and the temperature is constant at 5°C. Etching silicon wafers in a hypergravity field;
[0045] (3) Soak the etched silicon wafer in aqua regia for 30 minutes, rinse and dry to obtain a silicon nanowire array.
[0046] figure 2 Scanning electron microscope plan view of the silicon nanowire array prepared in this example, (a) is the silicon nanowire prepared in the non-hypergravity system, (b) and (c) are the sil...
Embodiment 2
[0049] (1) Weigh 391mg of silver nitrate solid particles and put them into a plastic bottle wrapped in aluminum foil in advance, add 14ml of hydrofluoric acid and then add 76ml of water to prepare an etching solution;
[0050] (2) Put the cleaned monocrystalline silicon chip into the test tube, adjust the position of the silicon chip so that the centrifugal force is parallel to the polished surface of the silicon chip, put the test tube into the centrifuge, and add the etching solution; set the parameters (rotating speed 100rpm, Temperature 25°C, time 30min), etch the silicon wafer;
[0051] (3) Soak the etched silicon wafer in aqua regia for 30 minutes, rinse and dry to obtain a silicon nanowire array.
[0052] Figure 4 The plan view and section view of the scanning electron microscope image of the silicon nanowire array prepared for this example. It can be seen from the figure that as the reaction time increases, the length of silicon nanowires prepared at low rotational ...
Embodiment 3
[0054] (1) Weigh 391mg of silver nitrate solid particles and put them into a plastic bottle wrapped in aluminum foil in advance, add 14ml of hydrofluoric acid and then add 76ml of water to prepare an etching solution;
[0055] (2) Put the cleaned monocrystalline silicon chip into the test tube, adjust the position of the silicon chip so that the centrifugal force is parallel to the polished surface of the silicon chip, put the test tube into the centrifuge, and add the etching solution; set the parameters (rotating speed 10000rpm, Temperature 50°C, time 5min), etch the silicon wafer;
[0056] (3) Soak the etched silicon wafer in aqua regia for 30 minutes, rinse and dry to obtain a silicon nanowire array.
[0057] Figure 5 The plan view and section view of the scanning electron microscope image of the silicon nanowire array prepared for this example. It can be seen from the figure that silicon nanowires with a certain length (3 μm) can be prepared in a short time with the in...
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